Back to results
US 2008/0258151 A1Published application
Light emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorTae Yun Kim
Life of this patent
Estimating the term…
Abstract
Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.
Claims20
A light emitting device comprising:
- a plurality of Un-GaN layers and a plurality of N-type semiconductor layers;
- an active layer on the N-type semiconductor layer;
- and
- a P-type semiconductor layer on the active layer,
- wherein at least of the Un GaN layers and at least of the N-type semiconductor layers are alternatively stacked on each other.
2 more elements
A method for manufacturing a light emitting device, the method comprising the steps of:
- alternatively forming a plurality of Un-GaN layers and a plurality of N-type semiconductor layers on a substrate;
- forming an active layer on the N-type semiconductor layer;
- and
- forming a P-type semiconductor layer on the active layer.
1 more element
Dependencies are inferred from the claim text.