Semiconductor Device and Method of Fabricating the Same
AssigneeSamsung Electronics Co., Ltd.
InventorTae-Yeon Seong
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Abstract
Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or/and formed on the second type nitride-based cladding layer.
Claims52
A semiconductor device comprising:
- a growth substrate having an insulating property;
- a nucleation layer formed on the growth substrate;
- an undoped buffering nitride-based layer formed on the nucleation layer while serving as a buffering layer;
- a first type nitride-based cladding layer formed on the undoped buffering nitride-based layer;
- a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer;
- a second type nitride-based cladding layer formed on the multi quantum well nitride-based active layer, the second type being different from the first type;
- and
- a tunnel junction layer formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or formed on the second type nitride-based cladding layer or formed both between the undoped buffering nitride-based layer and the first type nitride-based cladding layer and formed on the second type nitride-based cladding layer.
A semiconductor device comprising:
- a growth substrate having an insulating property;
- a nitride-based semiconductor thin film layer formed on the growth substrate;
- a supporting substrate layer formed on the nitride-based semiconductor thin film layer;
- and
- a light emitting structure formed on the supporting substrate layer.
A semiconductor device comprising:
- a thick film layer;
- a first epitaxial layer formed on the thick film layer, in which a top surface of the first epitaxial layer is surface-treated;
- and
- a second epitaxial layer formed on the first epitaxial layer and having a multi-layer including nitride-based semiconductors for electronic and optoelectronic devices, wherein each of the first and second epitaxial layer is prepared in a form of a single layer or a multi-layer including at least one compound expressed as InxAlyGazN (x, y and z are integers) or SixCyNz (x, y and z are integers).
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first epitaxial layer on a growth substrate having an insulating property;
- depositing a thick film layer having a thickness of 30 or more on the first epitaxial layer;
- removing the growth substrate by using a laser beam;
- and
- treating a surface of the first epitaxial layer, which is exposed as the growth substrate is removed.
Dependencies are inferred from the claim text.