US 2008/0258128 A1 · PHASE-CHANGEABLE MEMORY DEVICES

Abstract

A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.

Claims8

Dependent claims

A phase-changeable memory device comprising:

a substrate having a contact region therein;
an insulating interlayer on the substrate;
a silicon nitride layer on the insulating interlayer;
a lower electrode extending through the silicon nitride layer and the insulating interlayer and in electrical contact with the contact region of the substrate;
a phase-changeable material layer pattern on the lower electrode and the silicon nitride layer;
and
an upper electrode on the phase-changeable material layer pattern.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

12/147,996Filed 27 Jun 2008

Priority

KR 10-2004-006471217 Aug 2004

Published

23 Oct 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

G11C 13/0004
Using resistive RAM [RRAM] elements: comprising amorphous/crystalline phase transition cells
H10B 63/10
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: phase change RAM [PCRAM, PRAM] devices
H10B 63/30
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: comprising selection components having three or more electrodes, e.g.…
H10N 70/021
Manufacture or treatment of multistable switching devices: formation of switching materials, e.g. deposition of layers

Phase-changeable memory devices

Life of this patent

Phase-changeable memory devices

Life of this patent

Abstract

Claims8