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US 2008/0240198 A1Published application
Semiconductor laser having fabry-perot resonator
AssigneeMitsubishi Electric Corporation
InventorTetsuya Yagi
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Abstract
A semiconductor laser of the present invention is constructed such that the reflectance of the front facet coating film or the rear facet coating film dramatically decreases at wavelengths greater than a predetermined wavelength. This causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.
Claims4
A semiconductor laser comprising:
- a Fabry-Perot resonator;
- and
- a coating on a front facet or a rear facet of the Fabry-Perot resonator, wherein reflectance of the coating layer decreases at wavelengths longer than a predetermined wavelength.
Dependencies are inferred from the claim text.