# US 2008/0188090 A1 · Internal balanced coil for inductively coupled high density plasma processing chamber > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0188090 A1 - Document ID: US20080188090A1 - Status: Published application - Kind: A1 - Application number: 11/670,701 - Filed: 2007-02-02 - Published: 2008-08-07 - Earliest claimed: 2007-02-02 - Assignees: Applied Materials, Inc. - Inventors: Robert Chen; Canfeng Lai; Xinglong Chen; Weiyi Luo; Zhong Qiang Hua; Siqing Lu; Muhammad Rasheed; Qiwei Liang; Dmitry Lubomirsky; Ellie Y. Yieh - Web page: https://patentgrep.com/patent/US20080188090A1 ## CPC - C23C 16/507: using external electrodes, e.g. in tunnel type reactors - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment. ## Claims ### Claim 1 A substrate processing device, the device comprising: a coil comprising a first coil segment and a second coil segment, the first and second coil segments arranged to generate a magnetic field, wherein the coil comprises at least about two turns; at least one internal balance capacitor connected in series between the first coil segment and the second coil segment of the coil; and a gas distributor disposed near the first coil, wherein an electric field extends from the coil through the gas distributor toward a grounded structure connected to the gas distributor, and wherein the at least one capacitor and segments of the coil are arranged to decrease a voltage of the electric field that extends from the coil through the gas distributor. ### Claim 2 (depends on 1) The device of claim 1 wherein the coil is adapted to provide a high power HDP/CVD process with a voltage below a chamber blackening threshold voltage. ### Claim 3 (depends on 1) The device of claim 1 wherein the two coil segments have substantially similar inductances. ### Claim 4 (depends on 1) The device of claim 1 wherein the coil comprises at least about 4 turns. ### Claim 5 (depends on 1) The device of claim 1 further comprising: a second coil comprising a first coil segment and a second coil segment, the first and second coil segments of the second coil arranged to generate a second magnetic field; and at least one internal balance capacitor connected in series between the first coil segment and the second coil segment of the second coil; wherein the first coil and the second coil are arranged to at least partially overlap the magnetic fields to generate a plasma. ### Claim 6 (depends on 5) The device of claim 5 wherein the coils are adapted to provide a high power process with less than 1 kV applied to each coil. ### Claim 7 (depends on 5) The device of claim 5 wherein the coils are adapted to provide a high power process with less than about 750 V applied to each coil. ### Claim 8 A method of depositing a layer on a substrate, the method comprising: releasing a deposition gas from a gas distributor into a semiconductor process chamber; generating a plasma with an induction coil that applies a magnetic field to the semiconductor process chamber; charging a capacitor located between segments of the coil to decrease a voltage to the coil; generating an electric field with the voltage to the coil, wherein the electric field extends from at least one of the coil segments through the gas distributor and toward a grounded structure; and depositing the layer on the semiconductor substrate with the plasma. ### Claim 9 (depends on 8) The method of claim 8 wherein the electric field passes through a gas distributor comprising a baffle. ### Claim 10 (depends on 8) The method of claim 8 wherein the layer comprises a dielectric layer deposited with an HDP/CVD process.