# US 2008/0188073 A1 · Methods of forming a span comprising silicon dioxide > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0188073 A1 - Document ID: US20080188073A1 - Status: Published application - Kind: A1 - Application number: 11/724,654 - Filed: 2007-03-14 - Published: 2008-08-07 - Earliest claimed: 2007-02-07 - Assignees: Micron Technology, Inc. - Inventors: David H. Wells - Web page: https://patentgrep.com/patent/US20080188073A1 ## CPC - H10W 10/20: Air gaps - H10P 14/271: {characterised by the preparation of substrate for selective deposition} - H10P 14/278: {Pendeoepitaxy} - H10P 14/29: {characterised by the substrates} - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/3238: {being insulating materials} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10W 10/021: {of air gaps} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures. ## Claims ### Claim at position 1 1-152. (canceled) ### Claim 153 A method of forming a span comprising silicon dioxide, comprising: forming an opening comprising sidewalls within a semiconductor substrate; relative to at least some portion of the sidewalls, selectively growing an elemental-form silicon-containing material to bridge across the opening to form a covered cavity within the opening; and oxidizing all of the selectively grown elemental-form silicon-containing material which covers the opening to form a silicon dioxide-comprising bridge across the opening over the cavity. ### Claim 154 (depends on 153) The method of claim 153 comprising epitaxially growing an elemental-form silicon-comprising material from a base of the opening while selectively growing the elemental-form silicon-containing material to bridge across the opening. ### Claim 155 (depends on 153) The method of claim 153 wherein the selectively growing comprises epitaxially growing material which consists essentially of elemental-form monocrystalline silicon. ### Claim 156 (depends on 153) The method of claim 153 wherein the selectively growing comprises growing said elemental-form silicon-containing material from elemental-form silicon containing material. ### Claim 157 (depends on 156) The method of claim 156 comprising providing the elemental-form silicon-containing material from which the selectively growing occurs at uppermost opposing edges of the opening. ### Claim 158 (depends on 156) The method of claim 156 comprising providing the elemental-form silicon-containing material from which the selectively growing occurs spaced from uppermost opposing edges of the opening, with material other than elemental-form silicon-containing material covering the elemental-form silicon-containing material from which the selectively growing occurs. ### Claim 159 (depends on 153) The method of claim 153 wherein the selectively growing comprises growing said elemental-form silicon-containing material from at least one of elemental-form W or a silicide. ### Claim 160 (depends on 159) The method of claim 159 comprising providing the at least one of elemental-form W or a silicide from which the selectively growing occurs at uppermost opposing edges of the opening. ### Claim 161 (depends on 159) The method of claim 159 comprising providing the at least one of elemental-form W or a silicide from which the selectively growing occurs spaced from uppermost opposing edges of the opening, with material other than said at least one of elemental-form W and a silicide covering the at least one of elemental-form W and a silicide from which the selectively growing occurs. ### Claim 162 (depends on 159) The method of claim 159 wherein the at least one comprises elemental-form W. ### Claim 163 (depends on 159) The method of claim 159 wherein the at least one comprises a silicide ### Claim 164 (depends on 153) The method of claim 153 comprising providing the opening to comprise an elongated trench running generally parallel a mean outermost global surface of the semiconductor substrate. ### Claim 165 (depends on 164) The method of claim 164 comprising filling at least a majority of the trench with conductive material and forming an elongated conductive line therefrom. ### Claim 166 A method of forming a span comprising silicon dioxide, comprising: forming an opening comprising sidewalls within a semiconductor substrate; relative to at least some portion of the sidewalls, selectively growing an elemental-form silicon-containing material to bridge across the opening to form a covered cavity within the opening; and oxidizing at least an outermost upper half of the selectively grown elemental-form silicon-containing material across the opening to form a silicon dioxide-comprising bridge across the opening over the cavity. ### Claim 167 (depends on 166) The method of claim 166 wherein the oxidizing comprises oxidizing less than all of the selectively grown elemental-form silicon-containing material. ### Claim 168 (depends on 166) The method of claim 166 wherein the oxidizing comprises oxidizing only about half of the selectively grown elemental-form silicon-containing material. ### Claim 169 (depends on 166) The method of claim 166 wherein the oxidizing comprises oxidizing more than half of the selectively grown elemental-form silicon-containing material. ### Claim 170 (depends on 166) The method of claim 166 comprising epitaxially growing an elemental-form silicon-comprising material from a base of the opening while selectively growing the elemental-form silicon-containing material to bridge across the opening. ### Claim 171 (depends on 166) The method of claim 166 wherein the selectively growing comprises growing said elemental-form silicon-containing material from elemental-form silicon containing material. ### Claim 172 (depends on 166) The method of claim 166 wherein the selectively growing comprises growing said elemental-form silicon-containing material from at least one of elemental-form W or a silicide. ### Claim 173 (depends on 166) The method of claim 166 comprising providing the opening to comprise an elongated trench running generally parallel a mean outermost global surface of the semiconductor substrate. ### Claim 174 (depends on 173) The method of claim 173 comprising filling at least a majority of the trench with conductive material and forming an elongated conductive line therefrom. ### Claim at position 24 175-262. (canceled)