# US 2008/0188061 A1 · Method of protecting front surface structure of wafer and method of wafer dividing

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- Number: US 2008/0188061 A1
- Document ID: US20080188061A1
- Status: Published application
- Kind: A1
- Application number: 11/762,036
- Filed: 2007-06-12
- Published: 2008-08-07
- Earliest claimed: 2007-02-05
- Inventors: Chih-Hsien Chen
- Web page: https://patentgrep.com/patent/US20080188061A1

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of protecting front surface structure of a wafer and method of wafer dividing is provided. Initially, a wafer having a plurality of device disposed on a front surface thereof is provided. A protective layer is formed on the front surface of the wafer and a first bonding layer is provided to bond the wafer to a carrier. Subsequently, a wafer dividing process is performed to form a plurality of dies. After that, the first bonding layer and the protective layer are removed to separate the dies individually.

## Claims

### Claim 1

A method of protecting a front surface structure, comprising:
providing a wafer having a plurality of devices disposed on a front surface thereof;
forming a protective layer covering the front surface;
providing a first bonding layer and attaching the first bonding layer to the protective layer to bond the wafer to a carrier;
performing a wafer dividing process on a back surface of the wafer to form a plurality of dies; and
removing the first bonding layer and the protective layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein a photoresist layer is optionally formed to protect the devices on the front surface before the protective layer is formed on the front surface of the wafer.

### Claim 3 (depends on 1)

The method of claim 1 further comprising performing a curing process after the protective layer is formed.

### Claim 4 (depends on 1)

The method of claim 1, wherein a wafer thinning process is optionally performed on the back surface of the wafer after the wafer is bonded to the carrier.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
providing a second bonding layer; and
attaching the second bonding layer to the back surface of the dies for reversing the dies after the wafer dividing process is performed.

### Claim 6 (depends on 1)

The method of claim 1, wherein the protective layer is a water-soluble glue.

### Claim 7 (depends on 6)

The method of claim 6, wherein the protective layer is removed by hot water.

### Claim 8

A method of protecting a front surface structure and wafer dividing, comprising:
providing a wafer having a plurality of devices on a front surface thereof;
forming a water-soluble protective layer on the front surface of the wafer;
providing a first bonding layer and attaching the first bonding layer to the protective layer to bond the wafer to a carrier;
performing a wafer dividing process to segment the wafer from a back surface of the wafer and separate each device to form a plurality of dies;
providing a second bonding layer and attaching the second bonding layer to the back surface of the dies and reversing the dies;
removing the water-soluble protective layer and the first bonding layer; and
removing the second bonding layer to separate the dies.

### Claim 9 (depends on 8)

The method of claim 8, wherein a photoresist layer is optionally formed for protecting the devices on the front surface before the water-soluble protective layer is formed on the front surface of the wafer.

### Claim 10 (depends on 8)

The method of claim 8 further comprising performing a curing process after the protective layer is formed.

### Claim 11 (depends on 8)

The method of claim 8, wherein a wafer thinning process is optionally performed on the back surface of the wafer after the wafer is bonded to the carrier.

### Claim 12 (depends on 8)

The method of claim 8, wherein the protective layer is removed by hot water.