# US 2008/0188055 A1 · Metal-insulator-metal structure and method of forming the same

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- Number: US 2008/0188055 A1
- Document ID: US20080188055A1
- Status: Published application
- Kind: A1
- Application number: 11/586,528
- Filed: 2006-10-26
- Published: 2008-08-07
- Earliest claimed: 2006-10-26
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yu-Jen Wang; Chia-Shiung Tsai; Yeur-Luen Tu; Lan-Lin Chao; Chih-Ta Wu; Hsing-Lien Lin; Chung Chien Wang
- Web page: https://patentgrep.com/patent/US20080188055A1

## CPC

- H10D 1/692: {Electrodes}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a trench in the substrate;
forming a first conductive layer in the trench;
performing rapid thermal processing of the first conductive layer;
forming an insulator layer over the first conductive layer; and
forming a second conductive layer on the insulator layer.

### Claim 2 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, further comprising forming the first conductive layer by multiple steps of metal organic chemical vapor deposition of a metal nitride.

### Claim 3 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the rapid thermal processing is carried out at a temperature of from about 500° C. to about 720° C. for about 30 seconds to about 120 seconds, and forming the insulator layer includes depositing a high-k dielectric material having a dielectric constant of about 8 to about 10.

### Claim 4 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the insulator layer is formed by depositing a metal oxide.

### Claim 5 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, further comprising forming the second conductive layer by atomic layer deposition of a metal nitride.

### Claim 6 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device being manufactured comprises a metal-insulator-metal capacitor.

### Claim 7

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
providing a bottom anti-reflective coating (BARC) layer over the substrate;
forming a photoresist layer over the BARC layer;
patterning the photoresist layer to form a photoresist mask including an opening for a trench to be formed in the substrate;
etching the BARC layer and the photoresist layer through the openings in the photoresist mask to expose a portion of the substrate;
etching the exposed portion of the substrate to form the trench in the substrate;
forming a first conductive layer in the trench by metal organic chemical vapor deposition (MOCVD);
performing chemical mechanical polishing;
performing rapid thermal processing of the first conductive layer;
forming an insulator layer over the conductive layer; and
forming a second conductive layer on the insulator layer by atomic layer deposition.

### Claim 8 (depends on 7)

The method of manufacturing a semiconductor device according to claim 7, further comprising forming the first conductive layer by multiple steps of MOCVD of a metal nitride.

### Claim 9 (depends on 7)

The method of manufacturing a semiconductor device according to claim 7, wherein the rapid thermal processing is carried out at a temperature of from about 500° C. to about 720° C. for about 30 seconds to about 120 seconds, and forming the insulator layer includes depositing a high-k dielectric material having a dielectric constant of about 8 to about 10.

### Claim 10 (depends on 7)

The method of manufacturing a semiconductor device according to claim 7, wherein the insulator layer is formed by depositing a metal oxide.

### Claim 11 (depends on 7)

The method of manufacturing a semiconductor device according to claim 7, further comprising forming the second conductive layer by atomic layer deposition of a metal nitride.

### Claim 12 (depends on 7)

The method of manufacturing a semiconductor device according to claim 7, wherein the semiconductor device being manufactured comprises a metal-insulator-metal capacitor.