# US 2008/0188050 A1 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0188050 A1 - Document ID: US20080188050A1 - Status: Published application - Kind: A1 - Application number: 12/059,652 - Filed: 2008-03-31 - Published: 2008-08-07 - Earliest claimed: 2003-07-23 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Keiichi SEKIGUCHI; Junichi KOEZUKA; Yasuyuki ARAI; Shunpei YAMAZAKI - Web page: https://patentgrep.com/patent/US20080188050A1 ## CPC - H10D 86/40: characterised by multiple TFTs - H10D 30/6717: {the source and the drain regions being asymmetrical} - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/60: wherein the TFTs are in active matrices - H10D 30/6733: {Multi-gate TFTs} - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10W 70/655: Fan-out layouts - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/922: {Bond pads being integral with underlying chip-level interconnections} - H10W 72/9223: {with redistribution layers [RDL]} - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/9415: {relative to the surface, e.g. recessed, protruding} - H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region. ## Claims ### Claim 1 A method for manufacturing a semiconductor device comprising: forming a semiconductor film over a substrate; forming a gate insulating film on the semiconductor film; forming a gate electrode on the gate insulating film; doping an impurity element into a portion of the semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction. ### Claim 2 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the first region comprises a channel formation region and an LDD region. ### Claim 3 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the second region comprises at least one of source region and drain region. ### Claim 4 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 5 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, and wherein the third region is in contact with the fourth region along the one direction. ### Claim 6 (depends on 5) A method for manufacturing a semiconductor device according to claim 5, wherein the first region comprises a channel formation region and an LDD region. ### Claim 7 (depends on 5) A method for manufacturing a semiconductor device according to claim 5, wherein the second region comprises at least one of source region and drain region. ### Claim 8 (depends on 5) A method for manufacturing a semiconductor device according to claim 5, wherein the third region comprises a channel formation region. ### Claim 9 (depends on 5) A method for manufacturing a semiconductor device according to claim 5, wherein the fourth region comprises at least one of source region and drain region. ### Claim 10 (depends on 5) A method for manufacturing a semiconductor device according to claim 5, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 11 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; forming a resist mask so as to cover the second gate electrode; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region, a fourth region and a fifth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, wherein the third region is in contact with the fourth region along the one direction, and wherein the fourth region is in contact with the fifth region along the one direction. ### Claim 12 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the first region comprises a channel formation region and an LDD region. ### Claim 13 (depends on 11) A method for manufacturing a semiconductor device according to claim 11, wherein the second region comprises at least one of source region and drain region. ### Claim 14 (depends on 11) A method for manufacturing a semiconductor device according to claim 11, wherein the third region comprises a channel formation region. ### Claim 15 (depends on 11) A method for manufacturing a semiconductor device according to claim 11, wherein the fourth region comprises an LDD region which is not overlapped with the second gate electrode. ### Claim 16 (depends on 11) A method for manufacturing a semiconductor device according to claim 11, wherein the fifth region is at least one of source region and drain region. ### Claim 17 (depends on 11) A method for manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 18 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, and wherein a direction from the fourth region to the third region is opposite to the one direction. ### Claim 19 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the first region comprises a channel formation region and an LDD region. ### Claim 20 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the second region comprises at least one of source region and drain region. ### Claim 21 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the third region comprises a channel formation region and an offset region. ### Claim 22 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the fourth region comprises at least one of source region and drain region. ### Claim 23 (depends on 18) A method for manufacturing a semiconductor device according to claim 18, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 24 A method for manufacturing a semiconductor device comprising: forming a semiconductor film over a first substrate; forming a gate insulating film on the semiconductor film; forming a gate electrode on the gate insulating film; doping an impurity element into a portion of the semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction; forming a plurality of integrated circuits by using at least the semiconductor film; dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits; mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate; and electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element. ### Claim 25 (depends on 24) A method for manufacturing a semiconductor device according to claim 24, wherein the first region comprises a channel formation region and an LDD region. ### Claim 26 (depends on 24) A method for manufacturing a semiconductor device according to claim 24, wherein the second region comprises at least one of source region and drain region. ### Claim 27 (depends on 24) A method for manufacturing a semiconductor device according to claim 24, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 28 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, and wherein the third region is in contact with the fourth region along the one direction; forming a plurality of integrated circuits by using at least the semiconductor film; dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits; mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate; and electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element. ### Claim 29 (depends on 28) A method for manufacturing a semiconductor device according to claim 28, wherein the first region comprises a channel formation region and an LDD region. ### Claim 30 (depends on 28) A method for manufacturing a semiconductor device according to claim 28, wherein the second region comprises at least one of source region and drain region. ### Claim 31 (depends on 28) A method for manufacturing a semiconductor device according to claim 28, wherein the third region comprises a channel formation region. ### Claim 32 (depends on 28) A method for manufacturing a semiconductor device according to claim 28, wherein the fourth region comprises at least one of source region and drain region. ### Claim 33 (depends on 28) A method for manufacturing a semiconductor device according to claim 28, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 34 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; forming a resist mask so as to cover the second gate electrode; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region, a fourth region and a fifth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, wherein the third region is in contact with the fourth region along the one direction, and wherein the fourth region is in contact with the fifth region along the one direction; forming a plurality of integrated circuits by using at least the semiconductor film; dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits; mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate; and electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element. ### Claim 35 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the first region comprises a channel formation region and an LDD region. ### Claim 36 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the second region comprises at least one of source region and drain region. ### Claim 37 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the third region comprises a channel formation region. ### Claim 38 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the fourth region comprises an LDD region which is not overlapped with the second gate electrode. ### Claim 39 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the fifth region is at least one of source region and drain region. ### Claim 40 (depends on 34) A method for manufacturing a semiconductor device according to claim 34, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device. ### Claim 41 A method for manufacturing a semiconductor device comprising: forming a first semiconductor film and a second semiconductor film over a substrate; forming a first gate electrode over the first semiconductor film and a second gate electrode over the second semiconductor film; doping an impurity element into a portion of the first semiconductor film and a portion of the second semiconductor film from oblique one direction with respect to a surface of the substrate, whereby a first region and a second region are formed in the first semiconductor film, and whereby a third region and a fourth region are formed in the second semiconductor film, wherein a direction from the second region to the first region is in consistent with the one direction, and wherein a direction from the fourth region to the third region is opposite to the one direction; forming a plurality of integrated circuits by using at least the semiconductor film; dividing the first substrate into a plurality of second substrates, wherein at least one of the plurality of second substrates has at least one of the plurality of integrated circuits; mounting the at least one of the plurality of second substrates over a third substrate, wherein a semiconductor element or a display element is formed over the third substrate; and electrically connecting the at least one of the plurality of integrated circuits with the semiconductor element or the display element. ### Claim 42 (depends on 41) A method for manufacturing a semiconductor device according to claim 41, wherein the first region comprises a channel formation region and an LDD region. ### Claim 43 (depends on 41) A method for manufacturing a semiconductor device according to claim 41, wherein the second region comprises at least one of source region and drain region. ### Claim 44 (depends on 41) A method for manufacturing a semiconductor device according to claim 41, wherein the third region comprises a channel formation region and an offset region. ### Claim 45 (depends on 41) A method for manufacturing a semiconductor device according to claim 41, wherein the fourth region comprises at least one of source region and drain region. ### Claim 46 (depends on 41) A method for manufacturing a semiconductor device according to claim 41, wherein the semiconductor device is at least one selected from the group consisting of a portable digital assistant, a cellular phone, an electronic card, an electronic book, a personal computer, and a display device.