# US 2008/0188025 A1 · Semiconductor device manufacturing method

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- Number: US 2008/0188025 A1
- Document ID: US20080188025A1
- Status: Published application
- Kind: A1
- Application number: 12/000,809
- Filed: 2007-12-18
- Published: 2008-08-07
- Earliest claimed: 2007-02-05
- Assignees: Oki Electric Industry Co., Ltd.
- Inventors: Makiko Nakamura
- Web page: https://patentgrep.com/patent/US20080188025A1

## CPC

- H10W 74/124: {the encapsulations having cavities other than that occupied by chips}
- B81B 7/0041: {maintaining a controlled atmosphere with techniques not provided for in B81B7/0038}
- H10W 74/01: Manufacture or treatment
- B81C 2203/0136: Growing or depositing of a covering layer
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)

## Abstract

A movable structural body formed over a semiconductor substrate is covered with a sacrifice film. The sacrifice film is covered with a silicon oxide film. Further, through holes are defined in the silicon oxide film. The sacrifice film is removed through the through holes to form space between the movable structural body and the silicon oxide film. Aluminum or an aluminum alloy high in flowability is deposited over the silicon oxide film by a sputtering method to seal the through holes.

## Claims

### Claim 1

A semiconductor device manufacturing method comprising the steps of:
covering a movable structural body formed over a semiconductor substrate with a sacrifice film;
covering the sacrifice film with a first sealing member;
forming through holes in the first sealing member;
removing the sacrifice film through the through holes and forming space between the structural body and the first sealing member; and
depositing a second sealing member high in flowability over the first sealing member by a sputtering method thereby to seal the through holes.

### Claim 2 (depends on 1)

The semiconductor device manufacturing method according to claim 1, wherein the through holes are disposed in the first sealing member close to regions other than a region in which the movable structural body is disposed.

### Claim 3 (depends on 1)

The semiconductor device manufacturing method according to claim 1, wherein the through holes are disposed above electrodes disposed adjacent to the movable structural body.

### Claim 4 (depends on 1)

The semiconductor device manufacturing method according to claim 1, wherein the through holes are undisposed above the movable structural body.

### Claim 5 (depends on 1)

The semiconductor device manufacturing method according to claims 1, wherein the first sealing member is constituted as a silicon oxide film, a silicon nitride film or a laminated film thereof.

### Claim 6 (depends on 1)

The semiconductor device manufacturing method according to claims 1, wherein the second sealing, member is constituted as aluminum or an aluminum alloy.

### Claim 7 (depends on 6)

The semiconductor device manufacturing method according to claim 6, wherein the deposition of aluminum or the aluminum alloy by the sputtering method is done in a range of 300° C. to 500° C.