# US 2008/0187843 A1 · Photomask and method for manufacturing a semiconductor device using the photomask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0187843 A1 - Document ID: US20080187843A1 - Status: Published application - Kind: A1 - Application number: 12/025,250 - Filed: 2008-02-04 - Published: 2008-08-07 - Earliest claimed: 2007-02-02 - Assignees: Fujitsu Limited - Inventors: Naoyuki ISHIWATA - Web page: https://patentgrep.com/patent/US20080187843A1 ## CPC - G03F 1/40: Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A photomask including a chip area and a shaded area with a first transmitting pattern located in the chip area forming a ring shape with a missing part, and a second transmitting pattern located in the shaded area having a shape corresponding to the missing part of the first transmitting pattern. ## Claims ### Claim 1 A photomask comprising: a chip area with a semiconductor device pattern formed thereon; a shaded area surrounding the chip area; a first transmitting pattern located in the chip area having a ring shape with a missing part; and a second transmitting pattern located in the shaded area having a shape corresponding to the missing part. ### Claim 2 (depends on 1) The photomask according to claim 1, wherein a distance between the missing part of the first transmitting pattern and the second transmitting pattern is equivalent to a pitch of a step-and-repeat exposure process. ### Claim 3 (depends on 2) The photomask according to claim 2, wherein a length of the second transmitting pattern is longer than a length of the missing part of the first transmitting pattern. ### Claim 4 (depends on 3) The photomask according to claim 3, wherein a width of an edge part of the first transmitting pattern or the second transmitting pattern is narrower than a width of a remaining part of the pattern. ### Claim 5 (depends on 1) The photomask according to claim 1, wherein both the first transmitting pattern and the second transmitting pattern are patterns for a moisture proof ring. ### Claim 6 (depends on 5) The photomask according to claim 5, wherein said semiconductor device pattern is a circuit pattern for an electronic circuit inside of the first transmitting pattern. ### Claim 7 (depends on 6) The photomask according to claim 6, wherein the circuit pattern is a pattern for a contact hole. ### Claim 8 (depends on 6) The photomask according to claim 6, wherein the circuit pattern is a pattern for a wiring. ### Claim 9 (depends on 1) The photomask according to claim 1, wherein the photomask includes plural chip areas, and each chip area is provided with the first transmitting pattern. ### Claim 10 (depends on 1) The photomask according to claim 1, wherein the photomask is a binary mask. ### Claim 11 (depends on 1) The photomask according to claim 1, wherein the photomask is an attenuated phase shift mask. ### Claim 12 (depends on 1) The photomask according to claim 1, wherein the photomask is an alternating phase shift mask. ### Claim 13 A method of manufacturing a semiconductor device, comprising: a first exposing step using a photomask in a first area of a semiconductor substrate; and a second exposing step using the photomask in a second area adjacent to the first area of the semiconductor substrate; wherein the photomask comprises a first transmitting pattern having a ring shape with a missing part, and a second transmitting pattern having a shape corresponding to the missing part of the first transmitting pattern; and a closed loop pattern is exposed by the first exposing step and the second exposing step on the semiconductor substrate. ### Claim 14 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein a distance between the missing part of the first transmitting pattern and the second transmitting pattern is equivalent to a pitch of a step-and-repeat exposure process. ### Claim 15 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein a length of the second transmitting pattern is longer than a length of the missing part of the first transmitting pattern. ### Claim 16 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein a width of an edge part of either the first transmitting pattern or the second transmitting pattern is narrower than a width of a remaining part of the pattern. ### Claim 17 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein both the first transmitting pattern and the second transmitting pattern are patterns for forming a moisture proof ring. ### Claim 18 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein the first transmitting pattern comprises a circuit pattern for an electronic circuit. ### Claim 19 (depends on 18) The method of manufacturing a semiconductor device according to claim 18, wherein the circuit pattern is a pattern for a contact hole or a wiring. ### Claim 20 (depends on 13) The method of manufacturing a semiconductor device according to claim 13, wherein the photomask includes plural chip areas and each chip area is provided with the first transmitting pattern.