# US 2008/0187731 A1 · Techniques for Patterning Features in Semiconductor Devices

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2008/0187731 A1
- Document ID: US20080187731A1
- Status: Published application
- Kind: A1
- Application number: 12/062,186
- Filed: 2008-04-03
- Published: 2008-08-07
- Earliest claimed: 2003-09-12
- Assignees: International Business Machines Corporation
- Inventors: Scott D. Allen; Katherina E. Babich; Steven J. Holmes; Arpan P. Mahorowala; Dirk Pfeiffer; Richard Stephan Wise
- Web page: https://patentgrep.com/patent/US20080187731A1

## CPC

- H10P 50/73: {using masks for insulating materials}
- H10P 50/283: {by chemical means}
- H10P 76/2043: {using an anti-reflective coating}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10P 76/4088: {Processes for improving the resolution of the masks}
- Y10T 428/24802: Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T 428/24926: including ceramic, glass, porcelain or quartz layer
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.

## Claims

### Claim 1

A lithographic structure, the lithographic structure comprising an antireflective material having a feature patterned therein, the feature having at least one reduced critical dimension.

### Claim 2 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material is deposited on a substrate, the substrate having a feature patterned therein, the feature having at least one reduced critical dimension.

### Claim 3 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material comprises one or more inorganic moieties.

### Claim 4 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material has the structural formula M:carbon:hydrogen:X, wherein M comprises a metal and X comprises an inorganic element.

### Claim 5 (depends on 4)

The lithographic structure of claim 4, wherein M comprises a metal selected from the group consisting of silicon, titanium, germanium, iron, boron, tin and combinations comprising at least one of the foregoing metals.

### Claim 6 (depends on 4)

The lithographic structure of claim 4, wherein X comprises an inorganic element selected from the group consisting of oxygen, hydrogen, nitrogen and combinations comprising at least one of the foregoing inorganic elements.

### Claim 7 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material has the structural formula silicon:carbon:hydrogen:oxygen.

### Claim 8 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material comprises a tunable etch resistant antireflective coating.

### Claim 9 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material is deposited on a substrate using spin on processing.

### Claim 10 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material is deposited on a substrate using plasma enhanced chemical vapor deposition.

### Claim 11 (depends on 1)

The lithographic structure of claim 1, wherein the feature comprises a feature selected from the group consisting of contact holes, via patterns, lines, spaces, ovals and combinations comprising at least one of the foregoing features.

### Claim 12 (depends on 1)

The lithographic structure of claim 1, wherein the critical dimensions of any given feature is reduced by up to about 50 nanometers.

### Claim 13 (depends on 1)

The lithographic structure of claim 1, wherein the critical dimensions of any given feature is reduced by up to about 80 nanometers.

### Claim 14 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material is deposited on a substrate comprising a dielectric material.

### Claim 15 (depends on 1)

The method of claim 1, wherein the antireflective material is deposited on a substrate comprising a low-k dielectric material.

### Claim 16 (depends on 1)

The lithographic structure of claim 1, wherein the antireflective material is deposited on a substrate comprising an oxide material selected from the group consisting of fluorosilicate glass, borosilicate glass, borophosphorosilicate glass and combinations comprising at least one of the foregoing oxide materials.