# US 2008/0187017 A1 · Organic semiconductor laser and method for producing it

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- Number: US 2008/0187017 A1
- Document ID: US20080187017A1
- Status: Published application
- Kind: A1
- Application number: 12/011,437
- Filed: 2008-01-25
- Published: 2008-08-07
- Earliest claimed: 2007-01-25
- Assignees: OSRAM Opto Semiconductors GmbH
- Inventors: Norbert Linder; Martin Reufer
- Web page: https://patentgrep.com/patent/US20080187017A1

## CPC

- H01S 3/168: {using an organic dye dispersed in a solid matrix}
- H01S 3/0933: of a semiconductor, e.g. light emitting diode
- H01S 3/0635: {provided with a periodic structure, e.g. using distributed feed-back, grating couplers (controlling, e.g. modulating distributed feed-back lasers H01S3/102)}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (1), and also the method for producing said laser.

## Claims

### Claim 1

An organic semiconductor laser comprising a layer composed of organically laser-active material and a laser resonator,
in which an optical pump source is integrally connected to the organic semiconductor laser.

### Claim 2 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the optical pump source is an electrically operated inorganic LED (LED=light emitting device).

### Claim 3 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the laser resonator is formed by patterning a surface of the organically laser-active material.

### Claim 4 (depends on 2)

The organic semiconductor laser as claimed in claim 2, in which the organically laser-active material is separated from the inorganic LED by a separation layer.

### Claim 5 (depends on 4)

The organic semiconductor laser as claimed in claim 4, in which the laser resonator is formed at the interface layer between the separation layer and the organically laser-active material.

### Claim 6 (depends on 2)

The organic semiconductor laser as claimed in claim 2, in which the surface of the inorganic LED which faces the layer composed of organically laser-active material is formed in roughened fashion.

### Claim 7 (depends on 6)

The organic semiconductor laser as claimed in claim 6, in which the separation layer forms a planarization layer.

### Claim 8 (depends on 7)

The organic semiconductor laser as claimed in claim 7, in which the planarization layer is applied by coating processes such as spin-coating or blade coating.

### Claim 9 (depends on 2)

The organic semiconductor laser as claimed in claim 2, in which the surface of the inorganic LED has the form of a photonic crystal.

### Claim 10 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the surface profile of the surface of the inorganic LED is transferred to the laser-active layer composed of organic material and the laser resonator is thus formed.

### Claim 11 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the laser resonator is formed as a DFB (DFB=distributed feedback) resonator.

### Claim 12 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the emission wavelength of the pump source is coordinated with the absorption band of the organically laser-active material.

### Claim 13 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the laser resonator has a deep grating structure having a gradient in the modulation period.

### Claim 14 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the laser resonator is embodied with a periodic structure in a plurality of spatial directions, for example square or hexagonal grating.

### Claim 15 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the laser resonator is formed with a small modulation depth.

### Claim 16 (depends on 1)

The organic semiconductor laser as claimed in claim 1, in which the patterning of the laser resonator is effected mechanically or optically and/or chemically.

### Claim 17

A method for producing an organic semiconductor laser comprising an organic laser-active layer and a laser resonator,
in which an electrically operable inorganic LED (1) (LED=light emitting device) is provided with organic layers composed of laser-active material.

### Claim 18 (depends on 17)

The method as claimed in claim 17, in which the further layers such as, for example, a transparent separation layer or the layer composed of organically laser-active material are applied to the inorganic LED by deposition methods.

### Claim 19 (depends on 17)

The method as claimed in claim 17, in which the laser resonator is produced by a patterning of the laser-active organic layer.

### Claim 20 (depends on 19)

The method as claimed in claim 19, in which the production of the patterning is effected mechanically.

### Claim 21 (depends on 19)

The method as claimed in claim 19, in which the production of the patterning for the formation of the laser resonator is effected by optical and/or chemical methods.