# US 2008/0186579 A1 · System and a Method for Generating Periodic and/or Quasi-Periodic Pattern on a Sample

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- Number: US 2008/0186579 A1
- Document ID: US20080186579A1
- Status: Published application
- Kind: A1
- Application number: 11/665,323
- Filed: 2005-10-13
- Published: 2008-08-07
- Earliest claimed: 2004-10-22
- Assignees: Paul Scherrer Institut
- Inventors: Harun H. Solak
- Web page: https://patentgrep.com/patent/US20080186579A1

## CPC

- G03F 7/70408: {Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect}
- G03F 7/2022: {Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure}
- G03F 7/22: Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)}
- G03F 7/70325: {Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses}
- G03F 7/7035: {Proximity or contact printers}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A system for generating periodic or quasi-periodic patterns on a sample by means of an interference lithography technique includes a photon source, a mask and a sample holder. The mask has a grating for generating a predetermined pattern, wherein the mask is positioned at a first distance from the photon source. The sample holder is disposed at a second distance from the mask on a side facing away from the photon source. The second distance is selected to be where an intensity distribution is substantially stationary and distance-invariant, or the second distance is varied to obtain a desired average intensity distribution on the sample surface.

## Claims

### Claim 1

A system for generating at least one of a periodic and quasi-periodic pattern on a sample by using an interference lithography technique, comprising:
a) a photon source;
b) a mask having a grating for generating a predetermined pattern; said mask being positioned at a first distance from the photon source;
c) a sample holder for holding the sample being disposed at a second distance from the mask on a side facing away from the photon source, wherein the second distance is selected to be where an intensity distribution is substantially stationary and distance-invariant, or the second distance is varied to obtain a desired average intensity distribution on the sample surface.

### Claim 2 (depends on 1)

The system according to claim 1,
wherein
the photon source emits photons having a wavelength in a range of 1 to 100 nm.

### Claim 3 (depends on 1)

The system according to claim 1,
wherein
the photon source is a plasma source.

### Claim 4 (depends on 1)

The system according to claim 1,
wherein
the mask has a grating selected from a group consisting of a linear grating, a two-dimensional linear grating, a two-dimensional partially non-linear grating, a two-dimensional periodically circular grating, and a two-dimensional non-periodically circular grating.

### Claim 5 (depends on 1)

The system according to claim 1,
wherein
the first distance is at least 1 mm.

### Claim 6 (depends on 1)

The system according to claim 1,
wherein
the second distance is larger than a period of the grating of the mask.

### Claim 7 (depends on 1)

The system according to claim 1,
wherein
the photon source has a substantially isotropic radiation characteristic, and a plurality of mask/sample holder arrangements are displaced around the photon source.

### Claim 8

A method for generating at least one of a periodic and a quasi-periodic pattern on a sample by using an interference lithography technique, comprising:
a) providing a photon source;
b) providing a mask having a grating for generating a predetermined pattern;
c) positioning said mask at a first distance from the photon source;
d) providing a sample holder for holding the sample;
e) positioning the sample at a second distance from the mask on a side facing away from the photon source,
f) choosing the second distance to be in a range where the intensity distribution is substantially stationary and distance-invariant or varying the second distance in a continuous or discrete way to obtain a desired average intensity distribution on the surface; and
g) illuminating the sample with radiation originating from the photon source and passing through the mask.

### Claim 9 (depends on 8)

The method according to claim 8,
wherein
light emitted from the photon source is shaped and filtered by a number of optical elements.

### Claim 10 (depends on 8)

The method according to claim 8,
wherein
the photon source is a synchrotron radiation source.

### Claim 11 (depends on 8)

The method according to claim 8, wherein
the mask and the sample are scanned together to form a desired dose distribution on the sample.

### Claim 12 (depends on 8)

The method according to claim 8, wherein
the illuminating beam is scanned across the mask and the sample.

### Claim 13 (depends on 8)

The method according to claim 8, wherein
the sample is displaced in position or angle between multiple exposures to form a desired dose distribution on the sample.

### Claim 14 (depends on 8)

The method according to claim 8, wherein
a gas is introduced on at least one side of the mask to perform at least one of removal of heat and prevention of contamination.
