# US 2008/0186557 A1 · Hidden hinge MEMS device

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- Number: US 2008/0186557 A1
- Document ID: US20080186557A1
- Status: Published application
- Kind: A1
- Application number: 12/078,637
- Filed: 2008-04-02
- Published: 2008-08-07
- Earliest claimed: 2005-07-06
- Assignees: Micronic Laser Systems AB
- Inventors: Peter Enoksson; Martin Bring
- Web page: https://patentgrep.com/patent/US20080186557A1

## CPC

- B81B 3/0035: {Constitution or structural means for controlling the movement of the flexible or deformable elements}
- G02B 26/0841: {the reflecting element being moved or deformed by electrostatic means}
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

The present invention relates to a method for manufacturing a MEMS device, including the actions of: providing a substrate having a back and front surface essentially in parallel with each other, defining in said substrate at least one hidden support by removing material from said substrate, connecting said at least one hidden support onto a wafer with at least one actuation electrode capable to actuate at least a part of said substrate, wherein a rotational axis of said reflective surface is essentially perpendicular to said hidden support. The invention also relates to the MEMS as such.

## Claims

### Claim at position 1

-9. (canceled)

### Claim 10

A MEMS device comprising:
a first substrate having at least one reflective surface;
at least one hidden support, said hidden support being hidden underneath said reflective surface;
at least one leg, wherein said at least one leg is having a first surface essentially perpendicular to said reflective surface and a second electrostatically attractable surface essentially in parallel with said reflective surface, wherein said electrostatically attractable surface is used to rotate the reflective surface around a rotational axis; and
at least one actuation electrode provided on a second substrate, said second substrate being operable for actuating said reflective surface; wherein
said second substrate is connected to said substrate and said rotational axis of said reflective surface is essentially perpendicular to said hidden support.

### Claim 11

(canceled)

### Claim 12 (depends on 10)

The MEMS device according to claim 10, wherein said hidden hinge is essentially perpendicular to said reflective surface.

### Claim 13 (depends on 10)

The MEMS device according to claim 10, wherein said MEMS device is an SLM.

### Claim 14 (depends on 13)

The MEMS device according to claim 13, wherein said SLM comprises at least one mirror element with essentially a reflective surface.

### Claim 15 (depends on 13)

The MEMS device according to claim 13, wherein said SLM comprises at least one mirror element with a surface having diffractive properties.

### Claim 16 (depends on 14)

The MEMS device according to claim 14, wherein said at least one mirror element is deflectable by bending said hidden support while said at least one mirror element is kept essentially rigid when deflected.

### Claim at position 9

-18. (canceled)

### Claim 19 (depends on 10)

The MEMS device according to claim 10, wherein said first substrate is doped.

### Claim 20

(canceled)

### Claim 21 (depends on 10)

The MEMS device according to claim 10, wherein said reflective surface is rotatable in a first and a second direction from a non actuated state.

### Claim 22 (depends on 10)

The MEMS device according to claim 10, wherein said actuation electrode is capable to actuate said reflective surface electrostatically, magnetically, piezoelectrically or thermally.

### Claim 23 (depends on 15)

The MEMS device according to claim 15, wherein said at least one mirror element is deflectable by bending said hidden support while said at least one mirror element is kept essentially rigid when deflected.

### Claim 24 (depends on 10)

The MEMS device according to claim 10, wherein said second substrate is a wafer.