# US 2008/0185723 A1 · Semiconductor device

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- Number: US 2008/0185723 A1
- Document ID: US20080185723A1
- Status: Published application
- Kind: A1
- Application number: 12/068,309
- Filed: 2008-02-05
- Published: 2008-08-07
- Earliest claimed: 2007-02-06
- Assignees: Elpida Memory, Inc.
- Inventors: Yoshikazu Moriwaki
- Web page: https://patentgrep.com/patent/US20080185723A1

## CPC

- H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An antifuse includes a first conductor pattern, a sidewall insulating film formed on a side of the first conductor pattern, and a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern. The antifuse utilizes the sidewall insulating film as a capacitor insulating film of a capacitor.

## Claims

### Claim 1

A semiconductor device having an antifuse, wherein the antifuse comprises:
a first conductor pattern;
a sidewall insulating film formed on a side of the first conductor pattern; and
a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern.

### Claim 2 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the antifuse is formed within a device isolation insulating region.

### Claim 3 (depends on 2)

The semiconductor device as claimed in claim 2, wherein the first conductor pattern is a gate electrode pattern and the second conductor pattern is a contact electrode pattern.

### Claim 4 (depends on 3)

The semiconductor device as claimed in claim 3, wherein the sidewall insulating film is a gate sidewall nitride film.

### Claim 5 (depends on 4)

The semiconductor device as claimed in claim 4, wherein the sidewall insulating film has a film thickness so that hard breakdown occurs at insulation breakdown.

### Claim 6 (depends on 4)

The semiconductor device as claimed in claim 4, wherein the sidewall insulating film has a film thickness of an equivalent oxide thickness thicker than a film thickness of a gate insulating film of a transistor that is used as an internal circuit.

### Claim 7

An antifuse, comprising:
a first conductor pattern;
a sidewall insulating film formed on a side of the first conductor pattern; and
a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern.

### Claim 8 (depends on 7)

The antifuse as claimed in claim 7, wherein the first and second conductor patterns and the sidewall insulating film are formed within a device isolation insulating region.

### Claim 9 (depends on 8)

The antifuse as claimed in claim 8, wherein the first conductor pattern is a gate electrode pattern, the second conductor pattern is a contact electrode pattern, and the sidewall insulating film is a gate sidewall nitride film.

### Claim 10 (depends on 9)

The antifuse as claimed in claim 9, wherein the sidewall insulating film has a thickness thicker than a film thickness of a gate insulating film of a transistor that is used as an internal circuit so that hard breakdown occurs at insulation breakdown.