# US 2008/0185715 A1 · Semiconductor device and method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0185715 A1 - Document ID: US20080185715A1 - Status: Published application - Kind: A1 - Application number: 11/703,443 - Filed: 2007-02-07 - Published: 2008-08-07 - Earliest claimed: 2007-02-07 - Assignees: Infineon Technologies AG - Inventors: Werner Kroninger; Josef Schwaiger; Ludwig Schneider; Lukas Ossowski - Web page: https://patentgrep.com/patent/US20080185715A1 ## CPC - H10P 52/402: {of semiconductor materials} - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10P 72/7416: {used during dicing or grinding} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance. ## Claims ### Claim 1 A semiconductor device, comprising: a semiconductor wafer having first and second opposing sides; an active area formed on a first portion of the first side having a topology extending a first distance above the first side; and a support member attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the second portion of the first side defines an edge exclusion area about a periphery of the first side. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the support member comprises adhesive. ### Claim 4 (depends on 1) The semiconductor device of claim 1, further comprising an adhesive tape attached to the active area. ### Claim 5 (depends on 4) The semiconductor device of claim 4, wherein the support member is situated between the first side and the adhesive tape. ### Claim 6 (depends on 2) The semiconductor device of claim 2, wherein the support member is attached to the edge exclusion area. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein the support member comprises a ring of adhesive attached to the edge exclusion area. ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein the wafer is generally circular. ### Claim 9 (depends on 1) The semiconductor device of claim 1, wherein the active area includes an integrated circuit. ### Claim 10 A semiconductor device, comprising: a semiconductor wafer having first and second opposing sides; a active area formed on a first portion of the first side having a topology extending a first distance above the first side; and first means for adjusting a topology of a second portion of the first side. ### Claim 11 (depends on 10) The semiconductor device of claim 10, further comprising second means for attaching the first side to a chuck. ### Claim 12 (depends on 11) The semiconductor device of claim 11, wherein the first means is situated between the first side and the second means. ### Claim 13 A method of producing a semiconductor device, comprising: providing a semiconductor wafer having an active area formed on a first portion of a first side of the wafer, the active area having a topology extending a first distance above the first side; and attaching a support member to a second portion of the first side so that the support member extends a second distance above the first side, wherein the first distance is about the same as the second distance. ### Claim 14 (depends on 13) The method of claim 13, further comprising grinding a second side of the wafer opposite the first side to thin the wafer. ### Claim 15 (depends on 13) The method of claim 13, further comprising attaching the first side of the wafer to a chuck. ### Claim 16 (depends on 15) The method of claim 15, wherein attaching the first side to the chuck includes applying tape to the first side of the wafer. ### Claim 17 (depends on 13) The method of claim 13, wherein attaching the support member comprises applying adhesive to the second portion. ### Claim 18 (depends on 13) The method of claim 13, wherein the second portion is an edge exclusion area about a periphery of the first side. ### Claim 19 (depends on 18) The method of claim 18, wherein attaching the support member comprises applying a ring of adhesive to the edge exclusion area. ### Claim 20 (depends on 19) The method of claim 19, further comprising spinning the wafer to adjust the second distance. ### Claim 21 (depends on 17) The method of claim 17, further comprising annealing the adhesive. ### Claim 22 (depends on 21) The method of claim 21, wherein annealing the adhesive includes heating the adhesive. ### Claim 23 A method of producing a semiconductor device, comprising: providing a generally circular semiconductor wafer having an active area formed on a central portion of a first side of the wafer, the active area having a topology extending a first distance above the first side and forming an edge exclusion area about the periphery of the wafer; dispensing an adhesive around the edge exclusion area; attaching the first side to a chuck; and spinning the wafer to remove excess adhesive. ### Claim 24 (depends on 23) The method of claim 23, further comprising attaching a tape to the first side such that he active area and the adhesive are covered by the tape. ### Claim 25 (depends on 23) The method of claim 23, further comprising grinding a second side of the wafer opposite the first side to thin the wafer. ### Claim 26 (depends on 23) The method of claim 23, further comprising annealing the adhesive.