# US 2008/0185682 A1 · High Voltage Metal-On-Passivation Capacitor

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- Number: US 2008/0185682 A1
- Document ID: US20080185682A1
- Status: Published application
- Kind: A1
- Application number: 11/671,882
- Filed: 2007-02-06
- Published: 2008-08-07
- Earliest claimed: 2007-02-06
- Assignees: Micrel, Inc.
- Inventors: Martin Alter
- Web page: https://patentgrep.com/patent/US20080185682A1

## CPC

- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H01G 4/228: Terminals
- H01G 4/38: Multiple capacitors, i.e. structural combinations of fixed capacitors
- H10D 1/68: Capacitors having no potential barriers
- H10W 20/496: {Capacitor integral with wiring layers}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A capacitor is formed in an integrated circuit where the integrated circuit is fabricated using a fabrication process having multiple metal layers with the topmost metal layer being passivated by a passivation layer. The capacitor includes a first metal pad formed underneath the passivation layer using the topmost metal layer of the integrated circuit where the first metal pad forming the first conductive plate of the capacitor, and a second metal pad formed on the top of the passivation layer with the second metal pad being in vertical alignment with the first metal pad. The second metal pad forms the second conductive plate of the capacitor and the second metal pad is formed without an overlying passivation layer. The passivation layer sandwiched between the first metal pad and the second metal pad forms the dielectric of the capacitor.

## Claims

### Claim 1

A capacitor formed in an integrated circuit, the integrated circuit being fabricated using a fabrication process having multiple metal layers with the topmost metal layer being passivated by a passivation layer, the capacitor comprising:
a first metal pad formed underneath the passivation layer using the topmost metal layer of the integrated circuit, the first metal pad forming the first conductive plate of the capacitor; and
a second metal pad formed on the top of the passivation layer, the second metal pad being in vertical alignment with the first metal pad, the second metal pad forming the second conductive plate of the capacitor, the second metal pad being formed without an overlying passivation layer,
wherein the passivation layer sandwiched between the first metal pad and the second metal pad forms the dielectric of the capacitor.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein the second metal pad is formed using a material selected from aluminum, aluminum alloy, copper, copper alloy, titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW).

### Claim 3 (depends on 1)

The capacitor of claim 1, further comprising:
a third metal pad formed underneath the passivation layer using the topmost metal layer of the integrated circuit;
a metal interconnect formed in the passivation layer and electrically connecting the second metal pad to the third metal pad.

### Claim 4 (depends on 1)

The capacitor of claim 1, wherein the passivation layer comprises a first dielectric layer and a second dielectric layer formed over the first dielectric layer.

### Claim 5 (depends on 4)

The capacitor of claim 4, wherein the first dielectric layer comprises a silicon oxide layer and the second dielectric layer comprises a silicon nitride layer.

### Claim 6 (depends on 4)

The capacitor of claim 4, wherein the first dielectric layer comprises a silicon oxide layer and the second dielectric layer comprises a silicon oxynitride layer.

### Claim 7 (depends on 4)

The capacitor of claim 4, further comprising:
a fourth metal pad formed between the first dielectric layer and the second dielectric layer, the fourth metal pad being in vertical alignment with the first and second metal pads,
wherein the capacitor comprises a stacked capacitor including a first capacitor formed by the first metal pad and the fourth metal pad and the first dielectric layer sandwiched therebetween and a second capacitor formed by the fourth metal pad and the second metal pad and the second dielectric layer sandwiched therebetween.

### Claim 8 (depends on 7)

The capacitor of claim 7, wherein the first and second capacitors are electrically connected in series.

### Claim 9 (depends on 7)

The capacitor of claim 7, wherein the first and second capacitors are electrically connected in parallel.

### Claim 10 (depends on 7)

The capacitor of claim 7, wherein the second metal pad and the fourth metal pad are formed using a material selected from aluminum, aluminum alloy, copper, copper alloy, titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW).

### Claim 11 (depends on 7)

The capacitor of claim 7, further comprising:
a fifth metal pad formed underneath the passivation layer using the topmost metal layer of the integrated circuit;
a metal interconnect formed in the first dielectric layer and electrically connecting the fourth metal pad to the fifth metal pad.

### Claim 12 (depends on 1)

The capacitor of claim 1, wherein the second metal pad is disposed to accept a bond wire.

### Claim 13 (depends on 1)

The capacitor of claim 1, wherein the second metal pad has a thickness of about 1.5 μm.

### Claim 14 (depends on 7)

The capacitor of claim 7, wherein the fourth metal pad has a thickness of about 500-6000 Å.