# US 2008/0185675 A1 · Trench Isolation Structure and a Method of Manufacture Therefor

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- Number: US 2008/0185675 A1
- Document ID: US20080185675A1
- Status: Published application
- Kind: A1
- Application number: 12/101,965
- Filed: 2008-04-12
- Published: 2008-08-07
- Earliest claimed: 2004-06-17
- Assignees: Texas Instruments Incorporated
- Inventors: Rick L. Wise; Mark S. Rodder
- Web page: https://patentgrep.com/patent/US20080185675A1

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having a buffer layer (133) located on sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.

## Claims

### Claim 1

(canceled)

### Claim 2

(canceled)

### Claim 3

(canceled)

### Claim 4

(canceled)

### Claim 5

(canceled)

### Claim 6

(canceled)

### Claim 7

(canceled)

### Claim 8

(canceled)

### Claim 9

(canceled)

### Claim 10

(canceled)

### Claim 11

(canceled)

### Claim 12

A trench isolation structure, comprising:
a trench located within a substrate, the trench having sidewalls and a bottom surface;
a buffer layer located on the sidewalls of the trench; and
fill material located over the buffer layer, the fill material substantially filling the trench.

### Claim 13 (depends on 12)

The trench isolation structure as recited in claim 12 wherein a barrier layer is located between the buffer layer and the fill material.

### Claim 14 (depends on 13)

The trench isolation structure as recited in claim 13 wherein the barrier layer has a thickness ranging from about 4 nm to about 20 nm.

### Claim 15 (depends on 13)

The trench isolation structure as recited in claim 13 wherein the buffer layer is a layer of silicon.

### Claim 16 (depends on 15)

The trench isolation structure as recited in claim 15 wherein the barrier layer is a silicon dioxide barrier layer located on the layer of silicon.

### Claim 17 (depends on 12)

The trench isolation structure as recited in claim 12 wherein an interface exists between the buffer layer and the sidewalls.

### Claim 18 (depends on 12)

The trench isolation structure as recited in claim 12 wherein the substrate includes a first portion comprising silicon germanium and a second portion comprising silicon.

### Claim 19 (depends on 18)

The trench isolation structure as recited in claim 18 wherein at least a portion of the buffer layer proximate the first portion includes germanium.

### Claim 20 (depends on 12)

The trench isolation structure as recited in claim 12 wherein the buffer layer has a thickness ranging from about 1 nm to about 5 nm.

### Claim 21 (depends on 12)

The trench isolation structure as recited in claim 12 wherein the buffer layer is further located on the bottom surface.

### Claim 22

(canceled)

### Claim 23

(canceled)

### Claim 24

(canceled)

### Claim 25

(canceled)

### Claim 26

(canceled)

### Claim 27

(canceled)

### Claim 28

(canceled)