# US 2008/0185624 A1 · Storage capacitors for semiconductor devices

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- Number: US 2008/0185624 A1
- Document ID: US20080185624A1
- Status: Published application
- Kind: A1
- Application number: 12/100,042
- Filed: 2008-04-09
- Published: 2008-08-07
- Earliest claimed: 2004-11-11
- Assignees: Samsug Electronics Co., Ltd.
- Inventors: Rak-Hwan Kim; Young-Joo Cho; Sung-Tae Kim; In-Sun Park; Hyeon-Deok Lee; Hyun-Suk Lee; Jung-Hee Chung; Hyun-Young Kim; Hyun-Seok Lim
- Web page: https://patentgrep.com/patent/US20080185624A1

## CPC

- H10D 1/042: {using deposition processes to form electrode extensions}
- H10B 12/033: {the capacitor extending over the transistor}
- H10B 12/318: {the storage electrode having multiple segments}
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H10D 1/716: {having vertical extensions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

## Claims

### Claim 1

A storage capacitor, comprising:
a semiconductor substrate;
an interlayer insulation layer on the semiconductor substrate and having a contact plug formed therein; and
a storage electrode on the contact plug, the storage electrode comprising a titanium silicide layer on the contact plug, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

### Claim 2 (depends on 1)

The storage capacitor of claim 1, further comprising:
a dielectric layer on the storage electrode; and
a plate electrode on the dielectric layer.

### Claim 3 (depends on 1)

The storage capacitor of claim 1, wherein the titanium nitride layer has thickness of about 300 Å.

### Claim 4 (depends on 1)

The storage capacitor of claim 1, wherein the titanium oxide nitride layer has thickness of from about 10 Å to about 30 Å.

### Claim 5 (depends on 1)

The storage capacitor of claim 1, wherein the storage electrode is cylindrical.

### Claim 6 (depends on 1)

The storage capacitor of claim 1, further comprising a second titanium nitride layer on the titanium oxide nitride layer.