# US 2008/0185587 A1 · Display panel and method of manufacture

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- Number: US 2008/0185587 A1
- Document ID: US20080185587A1
- Status: Published application
- Kind: A1
- Application number: 11/928,697
- Filed: 2007-10-30
- Published: 2008-08-07
- Earliest claimed: 2007-02-05
- Inventors: Sang-Woo Whangbo; Jun-Hyung Souk; Yong-Suk Jin; Jin-Ho Ju; Min Kang; Myo-Kyong Joo
- Web page: https://patentgrep.com/patent/US20080185587A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/1333: Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence)
- H10D 86/40: characterised by multiple TFTs
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- G02F 1/133302: {Rigid substrates, e.g. inorganic substrates}
- G02F 1/133357: {Planarisation layers}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A display panel and a manufacturing method in which the display panel includes an alkali-containing glass substrate having a surface waviness of less about 0.06 μm, a gate electrode formed the substrate, a gate insulating layer formed on the gate electrode, a semiconductor formed on the gate insulating layer, a source electrode and a drain electrode contacting the semiconductor, and a pixel electrode electrically connected to the drain electrode.

## Claims

### Claim 1

A display panel comprising:
an alkali-containing glass substrate having a surface waviness of less than about 0.06 μm;
a gate electrode formed on the substrate;
a gate insulating layer formed on the gate electrode;
a semiconductor formed on the gate insulating layer;
a source electrode and a drain electrode that contact the semiconductor; and
a pixel electrode electrically connected to the drain electrode.

### Claim 2 (depends on 1)

The display panel of claim 1, wherein the alkali-containing glass substrate has a surface roughness of less than about 20 Å.

### Claim 3 (depends on 1)

The display panel of claim 1, wherein the gate insulating layer includes silicon nitride (SiNx), and has a thickness between about 500 Å to about 4500 Å.

### Claim 4 (depends on 3)

The display panel of claim 3, wherein the gate insulating layer includes a first gate insulating layer and a second gate insulating layer, each having a different deposition density.

### Claim 5 (depends on 1, 4)

The display panel of an of claim 1 to claim 4, wherein the alkali-containing glass substrate is a soda lime glass substrate.

### Claim 6

A display panel comprising:
an alkali-containing glass substrate having a surface waviness of less than about 0.06 μm;
a gate electrode formed on the substrate;
a gate insulating layer formed on the gate electrode;
a semiconductor formed on the gate insulating layer;
a source electrode and a drain electrode that contact the semiconductor;
a pixel electrode connected to the drain electrode and including a plurality of cutouts; and
a color filter disposed between the substrate and the pixel electrode.

### Claim 7 (depends on 6)

The display panel of claim 6, wherein the color filter is disposed between the source electrode, the drain electrode, and the pixel electrode, and the display panel further comprises an inorganic insulating layer interposed between the color filter and the pixel electrode.

### Claim 8 (depends on 6)

The display panel of claim 6, wherein the color filter is disposed between the substrate and the gate electrode, and the display panel further comprises a planarization layer interposed between the color filter and the gate electrode.

### Claim 9 (depends on 8)

The display panel of claim 8, further comprising a light blocking member disposed in a lower portion of the color filter.

### Claim 10 (depends on 8)

The display panel of claim 8, further comprising a light blocking member disposed in an upper portion of the semiconductor.

### Claim 11 (depends on 6, 10)

The display panel of any of claim 6 to claim 10, wherein the alkali-containing glass substrate is a soda lime glass substrate.

### Claim 12

A manufacturing method of a display panel, the manufacturing method comprising:
preparing an alkali-containing glass substrate having a surface waviness of less than about 0.06 μm;
forming a gate electrode on the substrate;
substantially forming a gate insulating layer and a semiconductor on the gate electrode;
forming a source electrode and a drain electrode on the gate insulating layer and the semiconductor; and
forming a pixel electrode connected to the drain electrode.

### Claim 13 (depends on 12)

The manufacturing method of claim 12, wherein the preparing of the alkali-containing glass substrate comprises polishing a surface of the substrate.

### Claim 14 (depends on 12)

The manufacturing method of claim 12, wherein the preparing of the alkali-containing glass substrate comprises forming a planarization layer on the substrate.

### Claim 15 (depends on 12)

The manufacturing method of claim 12, wherein the gate insulating layer and the semiconductor are formed by deposition at a temperature of less than about 250° C.

### Claim 16 (depends on 15)

The manufacturing method of claim 15, wherein the forming of the gate insulating layer comprises:
forming a first gate insulating layer; and
forming a second gate insulating layer with a deposition condition that is different from a deposition condition of the first gate insulating layer to make the first gate insulating layer and the second gate insulating layer have different densities.

### Claim 17 (depends on 12)

The manufacturing method of claim 12, further comprising performing an annealing process on the substrate before the preparing of the alkali-containing glass substrate.

### Claim 18 (depends on 17)

The manufacturing method of claim 17, wherein the annealing process is performed on the substrate by using a convection oven at a temperature between about 150 and about 400° C.

### Claim 19 (depends on 17)

The manufacturing method of claim 17, wherein the annealing process is performed by placing the substrate in a furnace.

### Claim 20 (depends on 19)

The manufacturing method of claim 19, wherein an annealing temperature of the substrate is about 400 to about 500° C.

### Claim 21 (depends on 12)

The manufacturing method of claim 12, further comprising, before the forming of the pixel electrode:
forming a color filter after forming the source electrode and the drain electrode; and
forming an inorganic insulating layer on the color filter.

### Claim 22 (depends on 12)

The manufacturing method of claim 12, further comprising, before the forming of the gate electrode:
forming a color filter on the substrate; and
forming a planarization layer on the color filter.

### Claim 23

A manufacturing method of a display panel, the manufacturing method comprising:
performing an annealing process on an alkali-containing glass substrate;
polishing the alkali-containing glass substrate on the substrate to make a surface waviness of the substrate less than about 0.06 μm;
forming a gate electrode on the substrate;
substantially forming a gate insulating layer and a semiconductor at a temperature of less than about 250° C. after forming the gate electrode;
forming a source electrode and a drain electrode after forming the gate insulating layer and the semiconductor; and
forming a pixel electrode connected to the drain electrode.

### Claim 24

A manufacturing method of a display panel, the manufacturing method comprising:
performing an annealing process on an alkali-containing glass substrate;
forming a planarization layer to make a surface waviness of the substrate less than about 0.06 μm;
forming a gate electrode on the substrate;
substantially forming a gate insulating layer and a semiconductor at a temperature of less than about 250° C. after forming the gate electrode;
forming a source electrode and a drain electrode after forming the gate insulating layer and the semiconductor; and
forming a pixel electrode connected to the drain electrode.

### Claim 25 (depends on 23, 24)

The manufacturing method of claim 23 or claim 24, wherein the forming of the gate insulating layer comprises:
forming a first gate insulating layer; and
forming a second gate insulating layer with a deposition condition that is different from a deposition condition of the first gate insulating layer to make the first gate insulating layer and the second gate insulating layer have different densities.

### Claim 26 (depends on 23, 24)

The manufacturing method of claim 23 or claim 24, wherein the annealing process is performed on the substrate by using a convection oven at a temperature between about 150 and about 400° C.

### Claim 27 (depends on 23, 24)

The manufacturing method of claim 23 or claim 24, wherein the annealing process is performed on the substrate placed in a furnace.

### Claim 28 (depends on 27)

The manufacturing method of claim 27, wherein an annealing temperature of the substrate is about 400 to about 500° C.

### Claim 29 (depends on 23, 24)

The manufacturing method of claim 23 or claim 24, further comprising, before the forming of the pixel electrode:
forming a color filter after forming the source electrode and the drain electrode; and
forming an inorganic insulating layer on the color filter.

### Claim 30 (depends on 23, 24)

The manufacturing method of claim 23 or claim 24, further comprising, before the forming of the gate electrode:
forming a color filter on the substrate; and
forming a planarization layer on the color filter.