# US 2008/0185574 A1 · Method of forming non-volatile resistance variable devices

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- Number: US 2008/0185574 A1
- Document ID: US20080185574A1
- Status: Published application
- Kind: A1
- Application number: 12/010,420
- Filed: 2008-01-24
- Published: 2008-08-07
- Earliest claimed: 2001-08-29
- Assignees: Micron Technology, Inc.
- Inventors: Kristy A. Campbell; Terry L. Gilton; John T. Moore; Jiutao Li
- Web page: https://patentgrep.com/patent/US20080185574A1

## CPC

- H10N 70/245: {the species being metal cations, e.g. programmable metallization cells}
- H10N 70/041: {Modification of switching materials after formation, e.g. doping (shaping H10N70/061)}
- H10N 70/046: {by diffusion, e.g. photo-dissolution}
- H10N 70/066: {by filling of openings, e.g. damascene method}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/882: {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}
- H10N 70/8822: {Sulfides, e.g. CuS}
- H10N 70/8825: {Selenides, e.g. GeSe}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A method of forming a non-volatile resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AxBy, where “B” is selected from S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to and HNO3 solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of “A” or an oxide of “B”. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.

## Claims

### Claim at position 1

1-89. (canceled)

### Claim 90

A memory device, comprising:
a resistance variable memory element between a first electrode and a second electrode; and
a substantially void-free interface between the second electrode and the resistance variable memory element, said interface comprising a passivating material.

### Claim 91 (depends on 90)

The memory device of claim 90, wherein the resistance variable resistance memory element comprises AxBy, where A is a chalcogenide component and B is selected from S, Se, Te, and mixtures thereof.

### Claim 92 (depends on 90)

The memory device of claim 90, further comprising a metal material between the resistance variable memory element and the passivating material.

### Claim 93 (depends on 90)

The memory device of claim 90, further comprising an oxidized portion of the variable resistance memory element.

### Claim 94 (depends on 90)

The memory device of claim 90, wherein the passivating material is a continuous covering over the variable resistance memory element.

### Claim 95 (depends on 90)

The memory device of claim 90, wherein the passivating material is a non-continuous covering over the variable resistance memory element.

### Claim 96

A variable resistance memory cell, comprising:
a first electrode;
a chalcogenide-based material over the first electrode, said chalcogenide-based material being doped with metal ions;
a passivating material covering at least a portion of a surface of the chalcogenide-based material; and
a second electrode over the passivating material, wherein there are no voids in an interface between the second electrode, passivating material, and chalcogenide-based material.

### Claim 97 (depends on 96)

The variable resistance memory cell of claim 96, wherein the chalcogenide-based material comprises germanium selenide.

### Claim 98 (depends on 96)

The variable resistance memory cell of claim 96, wherein the passivating material comprises germanium oxide.

### Claim 99 (depends on 96)

The variable resistance memory cell of claim 96, wherein the passivating material comprises selenium oxide.

### Claim 100 (depends on 96)

The variable resistance memory cell of claim 96, wherein the passivating material is a continuous covering over the chalcogenide-based material.

### Claim 101 (depends on 96)

The variable resistance memory cell of claim 96, wherein the passivating material is a non-continuous covering over the chalcogenide-based material.

### Claim 102

A method of forming a memory device, comprising:
forming a electrode;
forming a second electrode; and
forming a variable resistance memory element between the first and second electrodes, wherein a substantially void-free interface is formed between the variable resistance memory element and one of the first and second electrodes by forming a passivating material as part of the variable resistance memory element.

### Claim 103 (depends on 102)

The method of claim 102, wherein the passivating material is formed by plasma exposure.

### Claim 104 (depends on 103)

The method of claim 103, wherein the plasma comprises O2 or H2.

### Claim 105 (depends on 102)

The method of claim 102, wherein the passivating material is formed by H2O exposure.

### Claim 106 (depends on 102)

The method of claim 102, further comprising oxidizing a portion of the variable resistance memory element independent of forming the passivating material.

### Claim 107 (depends on 102)

The method of claim 102, further comprising exposing the variable resistance memory element to HNO3.

### Claim 108

A method of forming a variable resistance memory cell, comprising:
forming a first electrode;
forming a chalcogenide-based material over the first electrode;
forming a passivating material over the chalcogenide-based material; and
forming a second electrode over the passivating material, wherein there are substantially no voids between the second electrode, passivating material, and chalcogenide-based material.

### Claim 109 (depends on 108)

The method of claim 108, further comprising forming the passivating material as a non-continuous covering over the chalcogenide-based material.