# US 2008/0185528 A1 · Optoconductive compound and method of producing the same

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- Number: US 2008/0185528 A1
- Document ID: US20080185528A1
- Status: Published application
- Kind: A1
- Application number: 11/950,650
- Filed: 2007-12-05
- Published: 2008-08-07
- Earliest claimed: 2006-12-05
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: Kibong SONG; Kyeongam KIM; Sang Su LEE; Doo-Hee CHO
- Web page: https://patentgrep.com/patent/US20080185528A1

## CPC

- C01B 19/002: {Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions}
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2006/60: Optical properties, e.g. expressed in CIELAB-values
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements in which Y and Y′ can be identical to or different from each other.

## Claims

### Claim 1

An optoconductive compound represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements, wherein Y and Y′ can be identical to or different from each other.

### Claim 2 (depends on 1)

The optoconductive compound of claim 1, wherein the optoconductive compound is crystalline.

### Claim 3 (depends on 1)

The optoconductive compound of claim 1, wherein A is copper (Cu).

### Claim 4 (depends on 1)

The optoconductive compound of claim 1, wherein X is arsenic (As).

### Claim 5 (depends on 1)

The optoconductive compound of claim 1, wherein Y is sulfur (S) and Y′ is selenium (Se).

### Claim 6 (depends on 1)

The optoconductive compound of claim 1, wherein A is copper (Cu), X is arsenic (As), Y is sulfur (S), and Y′ is selenium (Se).

### Claim 7 (depends on 1)

The optoconductive compound of claim 1, wherein an optical bandgap of the optoconductive compound exists between 1.38 eV and 1.65 eV at 20° C.

### Claim 8 (depends on 1)

The optoconductive compound of claim 1, wherein the optoconductive compound has 2θ peaks between 43°and 45° and between 63° and 65° as obtained by X-ray diffraction.

### Claim 9 (depends on 1)

An optoconductive device comprising the optoconductive compound of any one of claims 1.

### Claim 10 (depends on 9)

The optoconductive device of claim 9, wherein the optoconductive device comprises a substrate, a light absorption layer formed on the substrate, a bottom electrode formed between the substrate and the light absorption layer, a buffer layer formed on the light absorption layer, a window layer formed on the buffer layer, and a grid electrode formed on the window layer, wherein the light absorption layer comprises the optoconductive compound.

### Claim 11

A method of producing an optoconductive compound, the method comprising:
depositing a first material represented by X2Y3 on a substrate;
depositing a second material represented by AY′2 on the first material; and
performing a heat treatment on the first material and the second material, wherein A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements, wherein Y and Y′ can be identical to or different from each other.

### Claim 12 (depends on 11)

The method of claim 11, wherein the first material is represented by As2S3.

### Claim 13 (depends on 11)

The method of claim 11, wherein the second material is represented by CuSe2.

### Claim 14 (depends on 11)

The method of claim 11, wherein the heat treatment is performed at a temperature of from 200° C. to 300° C.

### Claim 15 (depends on 11)

The method of claim 11, wherein the first material is amorphous.

### Claim 16 (depends on 11)

The method of claim 11, wherein the second material is crystalline.