# US 2008/0184934 A1 · Plasma reactor for the treatment of large size substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2008/0184934 A1 - Document ID: US20080184934A1 - Status: Published application - Kind: A1 - Application number: 11/872,957 - Filed: 2007-10-16 - Published: 2008-08-07 - Earliest claimed: 1999-08-10 - Assignees: Oc Oerlikon Balzers AG - Inventors: Jacques Schmitt - Web page: https://patentgrep.com/patent/US20080184934A1 ## CPC - H01J 37/32541: {Shape} - C23C 16/4583: {the substrate being supported substantially horizontally} - C23C 16/509: using internal electrodes - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)} - H01J 37/32238: {Windows} - H01J 37/32348: {Dielectric barrier discharge} - H01J 37/32532: {Electrodes} - H01J 37/32559: {Protection means, e.g. coatings} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface. ## Claims ### Claim 1 A capacitively coupled radiofrequency plasma reactor, comprising: at least one first electrode having a substrate supporting surface; at least one second electrode spaced at a distance from the first electrode, the second electrode having a concave surface facing the substrate supporting surface; an internal process area extending between the first and second electrodes; a gas inlet for providing the process area with a process gas; at least one radiofrequency generator for frequencies greater than 13.56 MHz connected to at least one of the electrodes, at a connection location, for generating a plasma discharge in the process area; a gas outlet for evacuating process gas from the reactor; and a dielectric layer having a convex surface dimensioned to matingly engage the concave surface of the second electrode and having a planar surface opposite the convex surface; wherein the substrate supporting surface is configured to receive at least one substrate with a largest dimension of at least 0.7 m, defining one boundary of the process area, to be exposed to the processing action of the plasma discharge; and wherein the dielectric layer is arranged electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform along at least one direction of the working surface of the substrate, for generating a given distribution profile, for compensating a process in a non-uniform manner along the working surface. ### Claim 2 (depends on 1) The reactor of claim 1, wherein the dielectric layer has a thickness along a direction perpendicular to the working surface of the substrate, the thickness being non-uniform along the dielectric layer, so that the reactor has a location-dependent capacitance per unit surface values along the working surface. ### Claim 3 (depends on 2) The reactor of claim 2, wherein the thickness of the dielectric layer gradually decreases toward the periphery. ### Claim 4 (depends on 1) The reactor of claim 1, wherein the at least one radiofrequency generator is centrally connected to at least one electrode. ### Claim 5 (depends on 1) The reactor of claim 1, wherein the at least one radiofrequency generator is centrally connected to the at least one first electrode and the at least one other radiofrequency generator is connected to the at least one second electrode. ### Claim 6 (depends on 1) The reactor of claim 1, wherein the dielectric plate is formed of a ceramic material and the substrate is made of a dielectric or metallic material. ### Claim 7 A capacitively coupled radiofrequency plasma reactor, comprising: at least one first electrode having a concave surface; at least one second electrode spaced at a distance from the first electrode; an internal process area extending between the first and second electrodes; a gas inlet for providing the process area with a process gas; at least one radiofrequency generator for frequencies greater than 13.56 MHz connected to at least one of the electrodes, at a connection location, for generating a plasma discharge in the process area; and a gas outlet for evacuating process gas from the reactor; a planar dielectric plate arranged over the side of the first electrode with the concave surface, the dielectric plate having a substrate surface facing away from the concave surface of the first electrode; a gaseous dielectric layer defined by the dielectric plate and the convex surface of the first electrode; wherein the substrate supporting surface is configured to receive at least one substrate with a largest dimension of at least 0.7 m, defining one boundary of the process area, to be exposed to the processing action of the plasma discharge; wherein the dielectric plate and the gaseous dielectric layer are arranged electrically in series with the substrate and the plasma discharge to form a dielectric structure having capacitance per unit surface values which are not uniform along at least one direction of the working surface of the substrate, for generating a given distribution profile, for compensating a process in a non-uniform manner along the working surface. ### Claim 8 (depends on 7) The reactor of claim 7, wherein the gaseous dielectric layer has a thickness along a direction perpendicular to the working surface of the substrate, the thickness being non-uniform along the dielectric layer, so that the reactor has a location-dependent capacitance per unit surface values along the working surface. ### Claim 9 (depends on 8) The reactor of claim 8, wherein the thickness of the gaseous dielectric layer gradually decreases toward the periphery. ### Claim 10 (depends on 7) The reactor of claim 7, wherein the at least one radiofrequency generator is centrally connected to at least one electrode. ### Claim 11 (depends on 7) The reactor of claim 7, wherein the at least one radiofrequency generator is centrally connected to the at least one first electrode and the at least one other radiofrequency generator is connected to the at least one second electrode. ### Claim 12 (depends on 7) The reactor of claim 7, wherein the dielectric plate is formed of a ceramic material and the substrate is made of a dielectric or metal material. ### Claim 13 (depends on 7) The reactor of claim 7, wherein the pressure in the gaseous dielectric layer is lower than the pressure in the process area. ### Claim 14 A capacitively coupled radiofrequency plasma reactor, comprising: at least one first electrode having a planar surface and a plurality of substrate supporting posts extending upward from the planar surface; a second electrode spaced at a distance from the first electrode; an internal process area extending between the first and second electrodes; a gas inlet for providing the process area with a process gas; at least one radiofrequency generator for frequencies greater than 13.56 MHz connected to at least one of the electrodes, at a connection location, for generating a plasma discharge in the process area; and a gas outlet for evacuating process gas from the reactor; wherein the ends of the posts collectively define a curved substrate supporting surface for at least one substrate with a largest dimension of at least 0.7 m, defining one boundary of the process area, to be exposed to the processing action of the plasma discharge; wherein the planar surface of the first electrode and the side of the substrate facing the planar surface define a gaseous dielectric layer; and wherein the gaseous dielectric layer is arranged electrically in series with the substrate and plasma discharge, the gaseous dielectric layer having capacitance per unit surface values which are not uniform along at least one direction of the working surface of the substrate, for generating a given distribution profile, for compensating a process in a non-uniform manner along the working surface. ### Claim 15 (depends on 14) The reactor of claim 14, wherein the gaseous dielectric layer has a thickness along a direction perpendicular to the working surface of the substrate, the thickness being non-uniform along the dielectric layer, so that the reactor has a location-dependent capacitance per unit surface values along the working surface. ### Claim 16 (depends on 15) The reactor of claim 15, wherein the thickness of the gaseous dielectric layer gradually decreases toward the periphery. ### Claim 17 (depends on 14) The reactor of claim 14, wherein the at least one radiofrequency generator is centrally connected to at least one electrode. ### Claim 18 (depends on 14) The reactor of claim 14, wherein the at least one radiofrequency generator is centrally connected to the at least one first electrode and the at least one other radiofrequency generator is connected to the second electrode. ### Claim 19 (depends on 14) The reactor of claim 14, wherein the pressure in the gaseous dielectric layer is lower than the pressure in the process area. ### Claim 20 (depends on 14) The reactor of claim 14, wherein the substrate is made of a dielectric material. ### Claim 21 (depends on 14) The reactor of claim 14, wherein the supporting posts are partially disposed within recesses formed on the first electrode.