# US 2008/0184805 A1 · Method for determining electro-migration failure mode

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- Number: US 2008/0184805 A1
- Document ID: US20080184805A1
- Status: Published application
- Kind: A1
- Application number: 11/729,759
- Filed: 2007-03-29
- Published: 2008-08-07
- Earliest claimed: 2007-02-05
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yi-Lung Cheng; BL Lin; CC Peng; C.S. Tsai; Hway-Chi Lin
- Web page: https://patentgrep.com/patent/US20080184805A1

## CPC

- G01R 31/2858: {Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

A method for testing integrated circuits includes forming a plurality of substantially identical first test structures, each comprising a first via structure connected to a first metal line, stress testing the plurality of first test structures to obtain a first plurality of failure times, and forming a plurality of substantially identical second test structures, each comprising a second via structure connected to a second metal line, wherein the second via structure has a substantially different reliability from the first via structure, and wherein the first metal line and the second metal line are substantially identical. The method further includes stress testing the plurality of second test structures to obtain a second plurality of failure times, and determining early failures of the plurality of first test structures and the plurality of second test structures.

## Claims

### Claim 1

A method of testing an integrated circuit, the method comprising:
forming a plurality of substantially identical first test structures, each comprising a first via structure connected to a first metal line;
stress testing the plurality of first test structures to obtain a first plurality of failure times;
forming a plurality of substantially identical second test structures, each comprising a second via structure connected to a second metal line, wherein the second via structure has a substantially different reliability from the first via structure, and wherein the first metal line and the second metal line are substantially identical;
stress testing the plurality of second test structures to obtain a second plurality of failure times; and
determining early failures of the plurality of first test structures and the plurality of second test structures.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of determining early failures comprises:
plotting the first plurality of failure times and the second plurality of failure times in a same plot;
identifying substantially overlapping portions of the first and the second plurality of failure times from the plot to determine intrinsic failures; and
identifying early failures by excluding the intrinsic failures.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first via structure comprises only one via and the second via structure comprises two vias.

### Claim 4 (depends on 3)

The method of claim 3, wherein the two vias in the second via structure each has a different width from the via in the first via structure.

### Claim 5 (depends on 3)

The method of claim 3, wherein the first via structure comprises only one via and the second via structure comprises three vias.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first and the second via structures comprise different materials.

### Claim 7 (depends on 1)

The method of claim 1, wherein the second via structure comprises a via having a width greater than 1.5 times a width of a via in the first via structure.

### Claim 8 (depends on 1)

The method of claim 1, wherein the second via structure has a cross-sectional area substantially smaller than a cross-sectional area of the first via structure.

### Claim 9 (depends on 1)

The method of claim 1, wherein the first metal line overlies the first via structure and the second metal line overlies the second via structure.

### Claim 10 (depends on 1)

The method of claim 1, wherein the first metal line underlies the first via structure and the second metal line underlies the second via structure.

### Claim 11

A method for analyzing integrated circuits, the method comprising:
forming a plurality of first test structures identical to each other, wherein each of the first test structures comprises a first via structure connected to a first metal line;
stress testing the plurality of first test structures to obtain a first plurality of failure times;
plotting the first plurality of failure times on a plot illustrating accumulative failure rates as a function of failure time;
forming a plurality of second test structures identical to each other, wherein each of the second test structures comprises a second via structure connected to a second metal line, and wherein the second via structure has a substantially different cross-sectional area from the first via structure, and wherein the first metal line and the second metal line are substantially identical;
stress testing the plurality of second test structures to obtain a second plurality of failure times;
plotting the second plurality of failure times on the plot;
determining substantially overlapping portions of the first and the second plurality of failure times to determine a dividing point between intrinsic failures and early failures; and
determining early failures of the plurality of first test structures, wherein the early failures have shorter failure times than the dividing point.

### Claim 12 (depends on 11)

The method of claim 11, wherein the second via structure comprises two vias, each being identical to the first via.

### Claim 13 (depends on 11)

The method of claim 11, wherein the second via structure comprises two vias, each having a different width from the first via.

### Claim 14 (depends on 11)

The method of claim 11, wherein a via in the second via structure comprises a single via having a width greater than about 1.5 times a width of a via in the first via structure.

### Claim 15 (depends on 11)

The method of claim 11, wherein the first and the second via structures comprise different materials.

### Claim 16 (depends on 11)

The method of claim 11 further comprising:
forming a plurality of third test structures identical to each other, wherein each of the third test structures comprises a third via structure connected to a third metal line, and wherein the third via structure has a substantially different cross-sectional area than the first via structure and the second via structure, and wherein the first metal line and the third metal line are substantially identical;
stress testing the plurality of third test structures to obtain a third plurality of failure times; and
plotting the third plurality of failure times on the plot, wherein the third plurality of failure times is used for determining the dividing point.