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US 2008/0177934 A1Published application
Memory systems having a multilevel cell flash memory and programming methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Sung Yu, Jin-Hyeok Choi
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Abstract
A method of programming a multilevel cell flash memory includes dividing a memory cell array of the flash memory into a user block and a cache block, programming first LSB data into a page of the user block, programming first MSB data into the page of the user block after programming the first LSB data, programming second LSB data into a page of the cache block, and storing control data for controlling the flash memory in the cache block.
Claims24
A method of programming a multilevel cell flash memory, comprising:
- dividing a memory cell array of the flash memory into a user block and a cache block;
- programming first LSB data into a page of the user block;
- programming first MSB data into the page of the user block after programming the first LSB data;
- programming second LSB data into a page of the cache block;
- and
- storing control data for controlling the flash memory in the cache block.
3 more elements
A memory system, comprising:
- a host;
- a multi-bit cell flash memory including a memory cell array having a user block and a cache block;
- and
- a memory controller operative to control the multi-bit cell flash memory in response to a command input from the host;
- wherein the user block is programmed with first MSB data after being programmed with first LSB data;
- and
- wherein the cache block is programmed with second LSB data and stores data for controlling the multi-bit cell flash memory.
4 more elements
Dependencies are inferred from the claim text.