Polishing slurry for chemical mechanical polishing and method for polishing substrate
AssigneeHitachi Cehmical Co., Ltd.
InventorsKouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
Life of this patent
Estimating the term…
Abstract
The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.
Claims5
A CMP polishing slurry used for polishing films to be polished include an inorganic insulating film such as the silicon oxide layer, comprising
- (a) cerium oxide particles,
- (b) a water-soluble high polymer compound selected from the group consisting of polyacrylic acid, ammoniurn polyacrylate, amine polyacrylate, polyvinyl acetate, polyvinyl imidazole and polyvinyl pyrrolidone,
- c) an organic compound having an acetylene bond represented by the general formula:
- wherein R3 to R6 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group of 1 to 5 carbon atoms;
- R7 and R8 are each independently a substituted or unsubstituted alkylene group of 1 to 5 carbon atoms;
- and “m” and “n” are each independently 0 or a positive number, and
- d) water,
- wherein a pH of the CMP polishing slurry is 5 to 8.5,
- and the concentration of (c) the organic compound is in a rage of 0.05 to 5.00% by weight to the polishing slurry.
Dependencies are inferred from the claim text.