High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
OwnerAmit Goyalinventor
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OwnerAmit Goyalinventor
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Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
A flexible, polycrystalline, REBCO-type, high-temperature superconducting tape with an orientation of {100}<100> or rotated {100}<100>, consisting of at least one superconducting layer having non-randomly dispersed, crystalline, epitaxial columns of nanodots and/or nanorods of a non-superconducting material, aligned preferentially along the c-axis of the superconductor, with the diameter of nanodots and/or nanorods being in the range of 2-100 nanometers.
A composition of matter comprising a superconducting film of overall composition RE0.8-2.0Ba1.5-2.5M0.01-0.2Cu2.5-3.5Ox, where M is selected from Ti, Zr, Al, Hf, Ir, Sn, Nb, Mo, Ta, Ce, V and RE is selected from Pr, Nd, Gd, Sm, Er, Eu, Pm, Dy, Ho, Tb, Tm or Lu.
A method of forming a flexible, polycrystalline, biaxially textured, REBCO-type, high-temperature superconducting tape consisting of at least one superconducting layer and comprising the steps of:
A biaxially textured, electrical, electronic, magnetic, electromagnetic or electrooptical device consisting of at least one device layer having non-randomly dispersed, crystalline, epitaxial columns of nanodots and/or nanorods of a another material, aligned preferentially within the device layer, with the diameter of nanodots and/or nanorods being in the range of 2-100 nanometers, said device layer being multicomponent or containing more than one cation.
Dependencies are inferred from the claim text.