Superregenerative system
AssigneeLexiwave Technology (Hong Kong), Limited
InventorHenry SinKai Lau
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Abstract
Methods and apparatuses for superregenerative system are disclosed, including an oscillator circuit for a superregenerative receiver. The oscillator circuit includes an RF oscillator, incorporating a self-biased transistor and a positive feedback circuit; and an external quench oscillator, for providing a quench signal to the RF oscillator; wherein the quench signal is coupled to the RF oscillator through a reversed-biased diode. The arrangement improves the performance of conventional superregenerative receivers by providing high selectivity and optimum receiver sensitivity, which is insusceptible to variations in supply voltage, temperature and device parameters.
Claims17
An oscillator circuit for a superregenerative receiver, comprising:
- an RF oscillator, comprising a self-biased transistor and a positive feedback circuit;
- and
- an external quench oscillator, for providing a quench signal to said RF oscillator;
- wherein said quench signal is coupled to said RF oscillator through a reversed-biased diode.
A superregenerative receiver comprising:
- an oscillator circuit, comprising
- an RF oscillator comprising a self-biased transistor and a positive feedback circuit;
- and
- an external quench oscillator for providing quench signal;
- wherein said quench signal is coupled to said RF oscillator through a reversed-biased diode;
- a low pass filter for filtering the output of said oscillator circuit;
- and
- a low-frequency amplifier for amplifying the output of said low pass filter.
A method of detecting a modulated RF signal, said method comprising the steps of:
- providing an external quench signal of low frequency;
- providing an oscillator operating at a radio frequency, said oscillator comprising a self-biased transistor and a positive feedback circuit;
- coupling said quench signal to said RF oscillator through a reversed-biased diode;
- and
- coupling the modulated RF signal from an antenna to said RF oscillator at any of the three terminals of said self-biased transistor.
Dependencies are inferred from the claim text.