Selective plasma processing method
AssigneeTokyo Electron Limited
InventorMasaru SASAKI
Life of this patent
Estimating the term…
Abstract
A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.
Claims12
A selective plasma processing method for, within a processing chamber of a plasma processing apparatus, acting oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film,
- wherein the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.
A selective plasma processing method for, within a processing chamber of a plasma processing apparatus, acting oxygen-containing plasma on a target object having a silicon exposing surface and a silicon nitride exposing surface to preferentially oxidize silicon on the silicon exposing surface in such a way that the ratio of a thickness of a silicon oxynitride film formed on the silicon nitride exposing surface to a thickness of a silicon oxide film formed on the silicon exposing surface becomes equal to or smaller than 20%.
A selective plasma processing method for, within a processing chamber of a plasma processing apparatus, acting nitrogen-containing plasma on a target object having silicon and a silicon oxide layer thereon to selectively nitriding the silicon with respect to the silicon oxide layer and to form a silicon nitride film,
- wherein the ratio of a thickness of a silicon oxynitride film formed within the silicon oxide layer to a thickness of the silicon nitride film formed by the nitriding is equal to or smaller than 25%.
A selective plasma processing method for, within a processing chamber of a plasma processing apparatus, acting nitrogen-containing plasma on a target object having a silicon exposing surface and a silicon oxide exposing surface to preferentially nitride silicon on the silicon exposing surface in such a way that the ratio of a thickness of a silicon oxynitride film formed on the silicon oxide exposing surface to a thickness of a silicon nitride film formed on the silicon exposing surface becomes equal to or smaller than 25%.
A plasma processing apparatus comprising:
- a vacuum-evacuated processing chamber including a table for supporting a target object;
- and
- a control part adapted to control the plasma processing apparatus to have the apparatus to perform a selective plasma processing method for, within the processing chamber, acting oxygen-containing plasma on the target object having a silicon exposing surface and a silicon nitride exposing surface to preferentially oxidize silicon on the silicon exposing surface in such a way that the ratio of a thickness of a silicon oxynitride film formed on the silicon nitride exposing surface to a thickness of a silicon oxide film formed on the silicon exposing surface becomes equal to or smaller than 20%.
A plasma processing apparatus comprising:
- a vacuum evacuable processing chamber including a mounting table for mounting a target object;
- and
- a controller adapted to control the plasma processing apparatus to have the apparatus to perform a selective plasma processing method for, within the processing chamber, acting nitrogen-containing plasma on the target object having a silicon exposing surface and a silicon oxide exposing surface to preferentially nitride silicon on the silicon exposing surface in such a way that the ratio of a thickness of a silicon oxynitride film formed on the silicon oxide exposing surface to a thickness of a silicon nitride film formed on the silicon exposing surface becomes equal to or smaller than 25%.
Dependencies are inferred from the claim text.