Methods for Fabricating Semiconductor Structures

A method for fabricating a semiconductor structure, comprising:

• providing a substrate;
• depositing a first layer on the substrate;
• depositing a second layer on the first layer;
• depositing a photoresist layer on the second layer;
• patterning the photoresist layer using an electromagnetic radiation source;
• using the patterned photoresist layer to etch the second layer to form a plurality of structures in the second layer;
• depositing a third layer on the etched second layer;
• etching the third layer to form a plurality of structures in the third layer;
• removing the plurality of structures in the second layer;
• depositing a fourth layer on the etched third layer;
• etching the fourth layer to form a plurality of structures in the fourth layer;
• and
• using the fourth layer as a mask to etch the first layer to form a semiconductor structure.

A method for fabricating a corrugated structure in a semiconductor surface, comprising:

• providing a first semiconductor layer;
• providing a second semiconductor layer on the first semiconductor layer;
• forming a plurality of line structures in the first semiconductor layer;
• using the plurality of line structure as a mask to etch the surface of the second semiconductor layer;
• and
• annealing the etched second semiconductor layer in a hydrogen atmosphere to form the corrugated surface in the second semiconductor layer.

A method for fabricating a device comprising:

• forming a plurality of line structures on a surface of a semiconductor substrate;
• using the plurality of line structures as a mask to etch the surface of the semiconductor substrate;
• annealing the etched surface in a hydrogen atmosphere to corrugate the surface of the semiconductor substrate;
• and
• fabricating a device on the corrugated surface.