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US 2008/0176402 A1Published application
Method for fabricating semiconductor device with recess gate
AssigneeHynix Semiconductor Inc.
InventorsMyung-Ok KIM, Tae-Woo JUNG
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Abstract
A method for fabricating a semiconductor device includes providing a substrate, forming a sacrificial oxide layer over the substrate, the sacrificial layer having a higher etch rate than the substrate, forming a hard mask pattern over the sacrificial oxide layer, wet-etching the sacrificial oxide layer using the hard mask pattern as an etch barrier, and forming a recess by etching an exposed substrate using the hard mask pattern as an etch barrier.
Claims19
A method for fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a sacrificial oxide layer over the substrate, the sacrificial layer having a higher etch rate than the substrate;
- forming a hard mask pattern over the sacrificial oxide layer;
- wet-etching the sacrificial oxide layer using the hard mask pattern as an etch barrier;
- and
- forming a recess by etching an exposed substrate using the hard mask pattern as an etch barrier.
3 more elements
Dependencies are inferred from the claim text.