Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising:

• forming an insulating film over the main surface of a semiconductor wafer;
• and filling, via a barrier metal film, a metal film in a connecting hole opened in the insulating film,
• the method comprising, after opening the connecting hole in the insulating film, the steps of:
• (a) placing the semiconductor wafer on a wafer stage of a first chamber, thereafter, supplying a seventh reaction gas into the first chamber and dry cleaning the bottom portion of the connecting hole;
• (b) placing the semiconductor wafer on a wafer stage of a second chamber and then heat treating the semiconductor wafer;
• (c) placing the semiconductor wafer on a wafer stage of a third chamber;
• (d) forming a first metal film over the bottom portion of the connecting hole by a thermal reaction using a first reaction gas;
• (e) forming a second metal film over the first metal film by a plasma reaction using the first reaction gas;
• and
• (f) subjecting the surface of the second metal film to second plasma treatment by using a third reaction gas containing nitrogen to form a first metal nitride film over the surface of the second metal film,
• wherein the step (d), (e) and (f) are performed in the third chamber.

A manufacturing method of a semiconductor device comprising:

• forming an insulating film over the main surface of a semiconductor wafer;
• and filling, via a barrier metal film, a metal film in a connecting hole opened in the insulating film,
• the method comprising, after opening the connecting hole in the insulating film, the steps of:
• (a) forming a second metal film over the bottom portion of the connecting hole by a plasma reaction using a first reaction gas;
• (b) forming a first metal nitride film over the surface of the second metal film by subjecting the surface of the second metal film to second plasma treatment by using a third reaction gas containing nitrogen;
• (c) forming a metal nucleation film over the first metal nitride film by CVD using a fifth reaction gas and first reducing gas;
• and
• (d) forming the metal film over the metal nucleation film by CVD using a sixth reaction gas and a second reducing gas.

A manufacturing method of a semiconductor device comprising:

• forming an insulating film over the main surface of a semiconductor wafer;
• and filling, via a barrier metal film, a metal film in a connecting hole opened in the insulating film,
• the method comprising, after opening the connecting hole in the insulating film, the steps of:
• (a) forming a second metal film over the bottom portion of the connecting hole by a plasma reaction using a first reaction gas;
• (b) subjecting the surface of the second metal film to second plasma treatment by using a third reaction gas containing nitrogen to form a first metal nitride film over the surface of the second metal film;
• (c) forming a seed layer over the first metal nitride film;
• and
• (d) forming the metal film over the seed layer by plating.