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US 2008/0176394 A1Published application
Method for manufacturing semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorTae Young Lee
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Abstract
A method for manufacturing a semiconductor device is provided. The method may include forming a metal interconnection on a substrate, forming a liner layer on the substrate including the metal interconnection, performing a plasma process to an entire surface of the substrate including the liner layer, and forming a dielectric film on the plasma-processed liner layer.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a metal interconnection on a substrate;
- forming a liner layer on the substrate including the metal interconnection;
- performing a plasma process to an entire surface of the substrate including the liner layer;
- and
- forming a dielectric film on the plasma-processed liner layer.
2 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming a first dielectric film on a substrate having a metal interconnection;
- forming a first silicon rich oxide (SRO) layer on the first dielectric film;
- performing a plasma process to an entire surface of the substrate including the first SRO layer;
- and
- forming a second dielectric film on the plasma-processed first SRO layer.
2 more elements
Dependencies are inferred from the claim text.