Methods for removing photoresist from semiconductor structures having high-k dielectric material layers
AssigneeGlobalfoundries Inc.
InventorRichard J. Carter
Life of this patent
Estimating the term…
Abstract
Methods for removing photoresist from semiconductor structures are provided. In an exemplary embodiment, a method for removing photoresist from a semiconductor structure having a high-k dielectric material layer overlying a substrate comprises depositing a photoresist overlying the high-k dielectric material layer and patterning the photoresist. The temperature of the substrate is adjusted to a temperature of no less than about 400° C. and hydrogen gas is excited to form a hydrogen plasma of excited H and H2 species. The photoresist is subjected to the excited H and H2 species from the hydrogen plasma.
Claims20
A method for removing photoresist from a semiconductor structure having a high-k dielectric material layer overlying a substrate, the method comprising the steps of:
- depositing a photoresist overlying the high-k dielectric material layer and patterning the photoresist;
- adjusting the temperature of the substrate to a temperature of no less than about 400° C.;
- exciting hydrogen gas to form a hydrogen plasma of excited H and H2 species;
- and
- subjecting the photoresist to the excited H and H2 species from the hydrogen plasma.
A method for fabricating a semiconductor structure overlying a substrate, the method comprising the steps of:
- depositing a high-k dielectric material layer overlying the substrate;
- depositing a gate electrode material on the high-k dielectric material layer;
- forming a patterned photoresist on the gate electrode material;
- etching the gate electrode material using the patterned photoresist as an etch mask;
- adjusting the temperature of the substrate to a temperature of no less than about 400° C.;
- and
- removing the patterned photoresist using a remote hydrogen plasma process.
A method for minimizing damage to a silicon-containing substrate while removing a photoresist therefrom, the method comprising the steps of:
- forming a patterned photoresist overlying the silicon-containing substrate;
- heating the substrate to a temperature no less than about 400° C.;
- and
- subjecting the photoresist to a remote hydrogen plasma process.
Dependencies are inferred from the claim text.