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US 2008/0176387 A1Published application
Plasma doping methods using multiple source gases
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-hoon Kang, Tai-su Park, Si-young Choi, Min-jin Kim
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Abstract
A plasma doping method includes providing a substrate including a layer to be doped inside a chamber, and supplying first and second source gases to the layer to achieve a desired doping concentration. The first source gas includes a component configured to increase a thickness of the layer, and the second gas includes a component configured to reduce a thickness of the layer.
Claims25
A plasma doping method, comprising:
- providing a substrate including a layer to be doped inside a chamber;
- and
- supplying first and second source gases to the layer to achieve a desired doping concentration, the first source gas comprising a component configured to increase a thickness of the layer, and the second source gas comprising a component configured to reduce the thickness of the layer.
Dependencies are inferred from the claim text.