Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorMasahiro Nakayama
Life of this patent
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Abstract
A method of producing a separated GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN is provided. In this method, a nitride deposit is formed during the growth on a periphery of the substrate and GaN crystal body. The present method comprises the steps of: processing the periphery of the substrate to remove the nitride deposit; and, after the peripheral processing, separating the substrate from the GaN crystal body to make the substrate and the GaN crystal body independent of each other.
Claims10
A method of producing a GaN independent substrate from a GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN, the growth resulting in forming a nitride deposit on a periphery of the substrate and GaN crystal body, the method comprising the steps of:
- processing the periphery of the substrate and GaN crystal body to remove the nitride deposit;
- and
- after the peripheral processing, separating the substrate from the GaN crystal body to form a GaN independent substrate by making the substrate and the GaN crystal body independent of each other.
A method of producing a GaN crystal body for forming a GaN substrate, the GaN crystal body being grown by vapor phase epitaxy on a substrate made of material different from GaN, the growth resulting in forming a nitride deposit on the GaN crystal body and a side face of the substrate, the method comprising the steps of:
- grinding a peripheral part of the nitride deposit by machining to remove a first outer periphery part of the nitride deposit on the side face of the GaN crystal body and a second outer periphery part of the nitride deposit on the side face of the substrate, a first inner periphery part of the nitride deposit being left on the side face of the GaN crystal body and a second inner periphery part of the nitride deposit being left on the side face of the substrate;
- after the grinding by machining, removing the substrate by etching;
- after removing the substrate, removing the second inner periphery part of the nitride deposit;
- and
- after the removal of the second inner periphery part, removing the first inner periphery part of the nitride deposit by machining to form the GaN crystal body.
A method of producing a GaN substrate from a GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN, the growth resulting in forming a nitride deposit on side faces of the GaN crystal body and the substrate, the method comprising the steps of:
- grinding a peripheral part of the nitride deposit by machining to remove a first outer periphery part of the nitride deposit on the side face of the GaN crystal body and a second outer periphery part of the nitride deposit on the side face of the substrate, a first inner periphery part of the nitride deposit being left on the side face of the GaN crystal body and a second inner periphery part of the nitride deposit being left on the side face of the substrate;
- after the grinding by machining, removing the substrate by etching;
- after the removal of the substrate, removing the second inner periphery part of the nitride deposit;
- after the removal of the second inner periphery part, removing the first inner periphery part of the nitride deposit by machining to form the GaN crystal body;
- and
- fabricating one or more GaN substrates from the GaN crystal body.
Dependencies are inferred from the claim text.