Methods of forming impurity regions in semiconductor devices
OwnerKyung-Seok Koinventor
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Abstract
Provided according to some embodiments of the present invention are methods of forming an impurity region in a semiconductor device. Such methods may include forming a pad oxide layer on a substrate; providing impurities to the substrate to form a preliminary impurity region in the substrate; performing a heat treatment process on the substrate while providing oxygen gas and an inert gas to the substrate; and removing the pad oxide layer. Methods according to embodiments of the invention may reduce pitting of the silicon substrate upon removal of the pad oxide layer.
Claims20
A method of forming an impurity region in a semiconductor device, the method comprising:
- forming a pad oxide layer on a substrate;
- providing impurities to the substrate to form a preliminary impurity region in the substrate;
- providing oxygen and an inert gas to the pad oxide layer and/or the substrate while performing a heat treatment process thereon;
- and
- removing the pad oxide layer.
A method of forming an impurity region in a semiconductor device, the method comprising:
- forming a first pad oxide layer on a substrate;
- providing impurities to the substrate to form a preliminary impurity region in the substrate;
- removing an upper portion of the first pad oxide layer to form a second pad oxide layer;
- performing a heat treatment process on the substrate and the second pad oxide layer;
- and then
- removing the second pad oxide layer.
Dependencies are inferred from the claim text.