Manufacturing Apparatus of Semiconductor Device and Method for Manufacturing Semiconductor Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKoichiro Tanaka, Shunpei Yamazaki
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Abstract
To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.
Claims31
A manufacturing apparatus comprising:
- a light source unit for emitting a laser beam;
- an optical system for shaping the laser beam into at least one of a rectangular shape and a linear shape;
- light control means for selectively shielding and controlling the laser beam having the at least one of the rectangular shape and the linear shape;
- and
- scanning means for scanning a surface of an irradiated body with a laser beam transmitted through the light control means,
- wherein the laser beam transmitted through the light control means removes an irradiated region of the irradiated body.
A manufacturing apparatus comprising:
- a light source unit for emitting a laser beam;
- an optical system for shaping the laser beam into at least one of a rectangular shape and a linear shape;
- light control means for selectively reflecting and controlling the laser beam having the at least one of the rectangular shape and the linear shape;
- and
- scanning means for scanning a surface of an irradiated body with a laser beam reflected by the light control means,
- wherein the laser beam reflected by the light control means removes an irradiated region of the irradiated body.
A method for manufacturing a semiconductor device, comprising:
- stacking a first material layer and a second material layer sequentially over a substrate;
- transmitting a laser beam having at least one of a rectangular shape and a linear shape through an electro-optical device;
- and
- selectively removing at least the second material layer by selectively scanning at least one of the first material layer and the second material layer with the laser beam, and by ablating at least one of the first material layer and the second material layer.
A method for manufacturing a semiconductor device, comprising:
- stacking a first material layer, a second material layer, and a third material layer sequentially over a substrate;
- transmitting a laser beam having at least one of a rectangular shape and a linear shape through an electro-optical device;
- and
- selectively removing at least the second material layer and the third material layer by selectively scanning at least one of the first material layer, the second material layer, and the third material layer with the laser beam and by ablating the second material layer by laser beam irradiation.
A method for manufacturing a semiconductor device, comprising:
- stacking a first material layer and a second material layer sequentially over a substrate;
- irradiating a digital micromirror device with a laser beam having at least one of a rectangular shape and a linear shape;
- and
- selectively removing at least the second material layer by selectively scanning at least one of the first material layer and the second material layer with the laser beam, and by ablating at least one of the first material layer and the second material layer.
A method for manufacturing a semiconductor device, comprising:
- stacking a first material layer, a second material layer, and a third material layer sequentially over a substrate;
- irradiating a digital micromirror device with a laser beam having at least one of a rectangular shape and a linear shape;
- and
- selectively removing at least the second material layer and the third material layer by selectively scanning at least one of the first material layer, the second material layer, and the third material layer with the laser beam and by ablating the second material layer by laser beam irradiation.
Dependencies are inferred from the claim text.