Method for forming isolation structure in semiconductor device

Abstract

A method for forming an isolation structure in a semiconductor device including a substrate having a first region and a second region, the second region having an isolation structure formed to a larger width than a plurality of isolation structures formed in the first region, is provided. The method includes etching portions of the first and second regions of the substrate to form first and second trenches, wherein a width of the second trench is larger than that of the first trench, forming a first insulation layer to fill a portion of the first and second trenches, forming a barrier layer to fill the first and second trenches, etching portions of the first insulation layer and the barrier layer in the first region, removing the barrier layer, and forming a second insulation layer over the first insulation layer.

Dependencies are inferred from the claim text.