Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device in accordance with the present invention comprises the steps of: (a) forming a gate (21) provided with side walls (12 to 14), in which each lower surface of the side walls is in contact with the surface of a substrate (1) through a first insulating film (13), on the substrate (1); (b) selectively forming an epitaxial film (31) on a diffusion region (41) within substrate (1) between adjacent gates (21); (c) forming a second insulating film (32 & 33) on an element-isolating region (42) adjacent to the diffusion regions (41); and (d) forming a conductor (11) on the epitaxial film (31) provided on the diffusion region (41) by processing a conductive film into a columnar form, wherein the step (c) includes (c1) forming the second insulating film (32 & 33) so that the thickness thereof is larger than that of a first insulating film (13).

Dependencies are inferred from the claim text.