Method for forming a dielectric layer

A method for forming a capacitor, comprising the steps:

• providing a substrate having a structured area;
• forming a trench in the substrate;
• forming a first electrode in or on the trench side walls;
• depositing a crystallization seed layer for a dielectric layer via an atomic layer deposition technique employing a first and a second precursor at a temperature in the range of 300° C. to 500° C. on the first electrode, the first pre-cursor being a compound having the constitutional formula M1(R1Cp)2(R2)2, wherein
• M1is one of hafnium and zirconium,
• Cp is cyclopentadienyl,
• R1 is independently selected of methyl, ethyl and alkyl,
• R2 is independently selected of hydrogen, methyl, ethyl, alkyl, alkoxyl and halogen,
• depositing the dielectric layer on the crystallization seed layer via an atomic layer deposition technique employing a third and a forth precursor wherein the third precursor being a compound having the constitutional formula M2 R3 R4 R5 R6, wherein
• M2 is one of hafnium or zirconium and
• R3, R4, R5, and R6 are independently selected of alkyl amines;
• and depositing a counter electrode on the dielectric layer in the trench.