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US 2008/0176373 A1Published application
Semiconductor device and manufacturing method for the same
AssigneeKabushiki Kaisha Toshiba
InventorMasafumi Hamaguchi
Life of this patent
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Abstract
A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.
Claims13
A manufacturing method for a semiconductor device, comprising:
- forming an amorphous region in a surface region of a semiconductor substrate by implanting one of germanium ions and silicon ions;
- implanting ions of first impurity atoms into the amorphous region, the first impurity atoms contributing to electric conductivity;
- implanting ions of second impurity atoms into the amorphous region, the second impurity atoms not contributing to the electric conductivity;
- and
- activating the ions of the first impurity atoms by annealing the surface region of the semiconductor substrate.
2 more elements
A manufacturing method for a semiconductor device, comprising:
- forming a gate insulating film on a surface of a semiconductor substrate and a gate electrode on the gate insulating film;
- forming an amorphous region on both sides of the gate insulating film in a surface region of the semiconductor substrate by implanting one of germanium ions and silicon ions;
- forming a first impurity implanted region by implanting ions of first impurity atoms into the amorphous region, the first impurity atoms contributing to electric conductivity;
- implanting ions of second impurity atoms into the amorphous region, the second impurity atoms not contributing to the electric conductivity;
- and
- activating the ions of the first impurity atoms by annealing the surface region of the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.