Method of making a non-volatile memory device

A method for forming a nonvolatile memory device using a semiconductor substrate, comprising:

• forming a charge storage layer, the charge storage layer comprising a material that stores electrical charge;
• forming a control gate electrode overlying the charge storage layer;
• forming a protective layer overlying the control gate electrode, the protective layer permitting etch selectivity by being able to be etched by an etchant that does not etch oxide, silicon and nitride;
• forming a first sidewall spacer adjacent the control gate electrode;
• forming a second sidewall spacer adjacent the first sidewall spacer;
• removing the second sidewall spacer from one side of the control gate electrode while leaving a remainder second sidewall spacer adjacent an opposing side of the control gate electrode;
• forming first and second current electrode regions in the semiconductor substrate respectively aligned to an outer edge of the first sidewall spacer and to an outer edge of the second sidewall spacer;
• forming a select gate electrode from the remainder second sidewall spacer;
• removing the protective layer overlying the control gate electrode;
• and
• making electrical contact to the control gate electrode, the select gate electrode and the first and second current electrode regions.

A method for forming a nonvolatile memory device using a semiconductor substrate, comprising:

• forming a charge storage layer overlying the semiconductor substrate;
• forming a control gate electrode overlying the charge storage layer;
• forming a protective layer overlying the control gate electrode comprising a material that provides etch selectivity by being able to be etched by an etchant that does not etch oxide, silicon and nitride;
• forming an insulating sidewall spacer adjacent exposed sides of the charge storage layer, the control gate electrode and the protective layer;
• forming first and second current electrode regions in the semiconductor substrate aligned to opposite sides of the control gate electrode, the first and second current electrode regions being formed by dopants that are blocked from the control gate electrode by the protective layer;
• removing the protective layer from above the control gate electrode by the etchant that does not etch oxide, silicon and nitride to leave the insulating sidewall spacer extending above the control gate electrode;
• and
• making electrical contact to the control gate electrode and the first and second current electrode regions.