Method of manufacturing thin film transistor substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Hoon YANG, Byoung-June KIM, Yong-Mo CHOI
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Abstract
The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH4, and forming pixel electrodes on the passivation film
Claims24
A method for manufacturing a thin film transistor substrate, the method comprising:
- forming gate wires on an insulation substrate;
- forming oxide active layer patterns on the gate wires;
- forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;
- forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH4;
- and
- forming pixel electrodes on the passivation film.
A method for manufacturing a thin film transistor substrate, the method comprising:
- forming gate wires on an insulation substrate;
- forming oxide active layer patterns on the gate wires;
- forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;
- forming a passivation film by depositing a thin film made of SiNx on a thin film made of SiOx after depositing the thin film made of SiOx on the oxide active layer patterns and the data wires using nitrous oxide (N2O) gas and SiH4;
- and
- forming pixel electrodes on the passivation film.
A method for manufacturing a thin film transistor substrate, the method comprising:
- forming gate wires on an insulation substrate;
- forming oxide active layer patterns on the gate wires;
- forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;
- exposing the oxide active layer patterns to plasma using a non-reductive reaction gas;
- forming a passivation film on the oxide active layer patterns and the data wires;
- and
- forming pixel electrodes on the passivation film.
A method for manufacturing a thin film transistor substrate, the method comprising:
- forming gate wires on an insulation substrate;
- forming oxide active layer patterns on the gate wires;
- forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;
- forming a passivation film on the oxide active layer patterns and the data wires;
- and
- forming pixel electrodes on the passivation film,
- wherein the forming of the passivation film is performed by chemical vapor deposition at a temperature of 200° C. or less.
Dependencies are inferred from the claim text.