Method For Making A Photovoltaic Cell Based On Thin-Film Silicon
AssigneeCommissariat a l'Energie Atomique
InventorsStephanie Huet, Pierre Juliet, Cedric Ducros, Frederic Sanchette
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Abstract
The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallising, at least partly, the at least one first layer (13) using a technology for crystallising silicon by pulsed electronic beam.
Claims20
1-19. (canceled)
A method for making a photovoltaic cell based on thin film silicon, said method consisting of providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer and a second N— (or P—) doped amorphous silicon layer, wherein said at least one first layer is crystallised, at least partly, using a technology for crystallising silicon by means of a pulsed electronic beam and in that the deposition of said first amorphous silicon layer is carried out by EBPVD.
Dependencies are inferred from the claim text.