Diode energy converter for chemical kinetic electron energy transfer
AssigneeNeoKismet, L.L.C.
InventorsAnthony C. Zuppero, Jawahar M. Gidwani
Life of this patent
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Abstract
An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated chemically from other regions in the converter, a region associated with an area that forms energy barriers of the desired height, a region associated with tailoring the boundary between semiconductor material and metal materials so that the junction does not tear apart, and a region associated with removing heat from the semiconductor.
Claims13
A method of forming an energy converter for converting vibrational energy of the vibrationally energized species into useful form of energy, comprising:
- forming a conducting surface on a stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species;
- forming the stabilizing interlayer conductor on an ohmic contact conductor, the stabilizing interlayer conductor being formed from one or more nanostructures;
- forming the ohmic contact conductor on a tailoring conductor, the ohmic contact conductor being formed from one or more nanostructures;
- forming the tailoring conductor on a semiconductor, the tailoring conductor being formed from one or more nanostructures;
- and
- forming the semiconductor into a pn junction.
A method of forming an energy converter for converting vibrational energy of the vibrationally energized species into useful form of energy, comprising:
- forming a conducting surface on a stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species;
- forming the stabilizing interlayer conductor on a Schottky conductor, the stabilizing interlayer conductor being formed from one or more nanostructures;
- forming the Schottky conductor on a tailoring conductor, the Schottky conductor being formed from one or more nanostructures;
- forming the tailoring conductor on a semiconductor, the tailoring conductor being formed from one or more nanostructures.
Dependencies are inferred from the claim text.