Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same

A method for manufacturing a wiring comprising:

• forming a substance having a photocatalytic function over a substrate;
• selectively irradiating the substance having a photocatalytic function with light to be hydrophilic;
• and
• discharging a conductive material mixed into a water-based solvent to a region irradiated with the light by an application method.

A method for manufacturing a wiring comprising:

• forming a substance having a photocatalytic function over a substrate;
• selectively irradiating the substance having a photocatalytic function with light to be oil-repellent;
• and
• discharging a conductive material mixed into an oil-based solvent between oil-repellent regions by an application method.

A method for manufacturing a thin film transistor comprising:

• forming a substance having a photocatalytic function over an insulating surface;
• selectively irradiating the substance with light to be hydrophilic;
• discharging a conductive material mixed into a water-based solvent to a region irradiated with the light by an ink-jet method to form a gate electrode;
• forming a semiconductor film over the gate electrode;
• forming a mask over the semiconductor film by an ink-jet method;
• patterning the semiconductor film by using the mask;
• and
• forming a wiring over the patterned semiconductor film by an ink-jet method.

A method for manufacturing a thin film transistor comprising:

• forming a substance having a photocatalytic function over an insulating surface;
• selectively irradiating the substance with light to be hydrophilic;
• discharging a conductive material mixed into a water-based solvent to a region irradiated with the light by an ink-jet method to form a gate electrode;
• sequentially forming a semiconductor film and a protective film over the gate electrode;
• patterning the protective film using the gate electrode;
• forming a semiconductor film having one conductivity to cover the patterned protective film;
• forming a mask over the semiconductor film having one conductivity by an ink-jet method;
• patterning the semiconductor film and the semiconductor film having one conductivity using the mask;
• and
• forming a wiring over the patterned semiconductor film having one conductivity by an ink-jet method.

A method for manufacturing a thin film transistor comprising:

• forming a crystalline semiconductor film over an insulating surface;
• forming a gate insulating film comprising a substance having a photocatalytic function to cover the semiconductor film;
• selectively irradiating the gate insulating film with light to be hydrophilic;
• discharging a conductive material mixed into a water-based solvent to a region irradiated with the light by an ink-jet method to form a gate electrode;
• etching the gate insulating film using the gate electrode;
• forming a metal film to cover the gate electrode;
• and
• reacting the semiconductor film and the metal film to form a silicide.

A method for manufacturing a thin film transistor comprising:

• forming a substance having a photocatalytic function over an insulating surface;
• selectively irradiating the substance with light to be oil-repellent;
• discharging a conductive material mixed into an oil-based solvent to an irradiation region of the light by an ink-jet method to form a wiring;
• forming a semiconductor film over the wiring;
• forming a gate insulating film comprising a substance having a photocatalytic function to cover the semiconductor film;
• selectively irradiating the gate insulating film with light to be oil-repellent;
• and
• discharging a conductive film mixed into an oil-based solvent to a region not irradiated with the light by an ink-jet method to form a gate electrode.

A method for manufacturing a thin film transistor comprising:

• forming a substance having a photocatalytic function over an insulating surface;
• selectively irradiating the substance with light to be oil-repellent;
• discharging a conductive material mixed into an oil-based solvent to a region not irradiated with the light by an ink-j et method to form a gate electrode;
• forming a semiconductor film over the gate electrode;
• forming a mask over the semiconductor film by an ink-jet method;
• patterning the semiconductor film using the mask;
• and
• forming a wiring over the patterned semiconductor film by an ink-jet method.

A method for manufacturing a thin film transistor comprising:

• forming a substance having a photocatalytic function over an insulating surface;
• selectively irradiating the substance with light to be oil-repellent;
• discharging a conductive material mixed into an oil-based solvent to a region not irradiated with the light by an ink-jet method to form a gate electrode;
• sequentially forming a semiconductor film and a protective film over the gate electrode;
• patterning the protective film using the gate electrode;
• forming a semiconductor film having one conductivity to cover the patterned protective film;
• forming a mask over the semiconductor film having one conductivity by an ink-jet method;
• patterning the semiconductor film and the semiconductor film having one conductivity using the mask;
• and
• forming a wiring over the patterned semiconductor film having one conductivity by an ink-jet method.

A method for manufacturing a thin film transistor comprising:

• forming a crystalline semiconductor film over an insulating surface;
• forming a gate insulating film comprising a substance having a photocatalytic function to cover the semiconductor film;
• selectively irradiating the gate insulating film with light to be oil-repellent;
• discharging a conductive material mixed into an oil-based solvent to a region not irradiated with the light by an ink-jet method to form a gate electrode;
• etching the gate insulating film by using the gate electrode;
• forming a metal film to cover the gate electrode;
• and
• reacting the semiconductor film and the metal film to form a silicide.