Back to results
US 2008/0176152 A1Published application
Mask Patterns for Semiconductor Device Fabrication and Related Methods and Structures
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hwan Hah, Hyun-Woo Kim, Mitsuhiro Hata, Sang-gyun Woo
Life of this patent
Estimating the term…
Abstract
Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
Claims11
A structure for patterning a layer of an integrated circuit device, the structure comprising:
- a resist pattern on the layer of the integrated circuit device, wherein portions of the layer are exposed through openings of the resist pattern;
- and
- an organic-inorganic hybrid siloxane network film on the resist pattern.
Dependencies are inferred from the claim text.