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US 2008/0176149 A1Published application
Endpoint detection for photomask etching
AssigneeApplied Materials, Inc.
InventorMichael Grimbergen
Life of this patent
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Abstract
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
Claims14
A method for processing a substrate, comprising:
- detecting an orientation of a patterned photomask reticle while disposed on a substrate support in a plasma etch chamber;
- and
- selecting and/or altering an etch process in response to the detected orientation.
A method for processing a substrate, comprising:
- placing a patterned photomask reticle on a substrate support in a plasma etch chamber;
- prior to etching, detecting an orientation of the patterned photomask reticle while on the substrate support using at least one of a light passing through the photomask reticle or reflected from a surface of a layer comprising the photomask reticle;
- selecting an etch process in response to the detected orientation;
- and
- etching the photomask reticle using the etch process.
2 more elements
A method for processing a substrate, comprising:
- placing a patterned substrate on a substrate support a plasma etch chamber;
- etching a substrate;
- and
- detecting an etching endpoint using a light having a wavelength absorbed by a layer disposed on the substrate.
1 more element
Dependencies are inferred from the claim text.